TY - JOUR
T1 - A Graphene-Based Straintronic Physically Unclonable Function
AU - Ghosh, Subir
AU - Zheng, Yikai
AU - Radhakrishnan, Shiva Subbulakshmi
AU - Schranghamer, Thomas F.
AU - Das, Saptarshi
N1 - Publisher Copyright:
© 2023 American Chemical Society.
PY - 2023/6/14
Y1 - 2023/6/14
N2 - Physically unclonable functions (PUFs) are an integral part of modern-day hardware security. Various types of PUFs already exist, including optical, electronic, and magnetic PUFs. Here, we introduce a novel straintronic PUF (SPUF) by exploiting strain-induced reversible cracking in the contact microstructures of graphene field-effect transistors (GFETs). We found that strain cycling in GFETs with a piezoelectric gate stack and high-tensile-strength metal contacts can lead to an abrupt transition in some GFET transfer characteristics, whereas other GFETs remain resilient to strain cycling. Strain sensitive GFETs show colossal ON/OFF current ratios >107, whereas strain-resilient GFETs show ON/OFF current ratios <10. We fabricated a total of 25 SPUFs, each comprising 16 GFETs, and found near-ideal performance. SPUFs also demonstrated resilience to regression-based machine learning (ML) attacks in addition to supply voltage and temporal stability. Our findings highlight the opportunities for emerging straintronic devices in addressing some of the critical needs of the microelectronics industry.
AB - Physically unclonable functions (PUFs) are an integral part of modern-day hardware security. Various types of PUFs already exist, including optical, electronic, and magnetic PUFs. Here, we introduce a novel straintronic PUF (SPUF) by exploiting strain-induced reversible cracking in the contact microstructures of graphene field-effect transistors (GFETs). We found that strain cycling in GFETs with a piezoelectric gate stack and high-tensile-strength metal contacts can lead to an abrupt transition in some GFET transfer characteristics, whereas other GFETs remain resilient to strain cycling. Strain sensitive GFETs show colossal ON/OFF current ratios >107, whereas strain-resilient GFETs show ON/OFF current ratios <10. We fabricated a total of 25 SPUFs, each comprising 16 GFETs, and found near-ideal performance. SPUFs also demonstrated resilience to regression-based machine learning (ML) attacks in addition to supply voltage and temporal stability. Our findings highlight the opportunities for emerging straintronic devices in addressing some of the critical needs of the microelectronics industry.
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U2 - 10.1021/acs.nanolett.3c01145
DO - 10.1021/acs.nanolett.3c01145
M3 - Article
C2 - 37212254
AN - SCOPUS:85162769133
SN - 1530-6984
VL - 23
SP - 5171
EP - 5179
JO - Nano letters
JF - Nano letters
IS - 11
ER -