A high efficiency 90-nm CMOSRF to DC rectifier

Maziar Rastmanesh, Ezz El-Masry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

This paper presents a novel high efficiency RF to DC converter for RFID applications. The proposed rectifier circuit is designed in 90 nm CMOS technology using single RF source. It exploits an internal Vth cancellation technique along with a leakage current reducer. The circuit performs well in the low input power threshold. The Simulation results at frequency of 920MHz show that the Power Conversion Efficiency (PCE) has improved compared to the conventional rectifier using diode connected transistor and Vth cancellation techniques. The measured PCE is 36.3% at-14.3dBm and is improved to 54.5% with an impedance matching network between the source and rectifiers' input.

Original languageEnglish (US)
Title of host publication2013 IEEE 56th International Midwest Symposium on Circuits and Systems, MWSCAS 2013
Pages705-708
Number of pages4
DOIs
StatePublished - 2013
Event2013 IEEE 56th International Midwest Symposium on Circuits and Systems, MWSCAS 2013 - Columbus, OH, United States
Duration: Aug 4 2013Aug 7 2013

Publication series

NameMidwest Symposium on Circuits and Systems
ISSN (Print)1548-3746

Other

Other2013 IEEE 56th International Midwest Symposium on Circuits and Systems, MWSCAS 2013
Country/TerritoryUnited States
CityColumbus, OH
Period8/4/138/7/13

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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