A high QM relaxor ferroelectric single crystal: Growth and characterization

Jun Luo, Wesley Hackenberger, Shujun Zhang, Thomas R. Shrout

Research output: Chapter in Book/Report/Conference proceedingConference contribution

20 Scopus citations


Mn doped PIN-PMN-PT single crystals with diameter of 50mm have been successfully grown by the Bridgman method along >111<, >110< and >001< orientations. The effect of the acceptor dopant, Mn, on mechanical loss and other electromechanical properties was studied in comparison with pure PIN-PMN-PT single crystal under high and low electric fields. A complete set of piezoelectric, dielectric and elastic properties was derived from resonance measurements. It was demonstrated that by doping Mn, QM increases 4-5 times to 700-1000 in >001<-poled longitudinal samples without any compromise in electromechanical coupling (k33). Mn doped PIN-PMN-PT crystals also show strong anisotropy. For 110-poled longitudinal samples, Q M and EC increase to above 1000 and 8-10kV/cm, respectively, which is comparable to hard PZT ceramics. The fatigue behavior was investigated as function of crystal orientation and magnitude of the electric field. Polarization degradation was observed to suddenly occur along 110 orientation above 100 cycles of 15kV/cm bipolar field, while nearly no fatigue was seen along >001< orientation.

Original languageEnglish (US)
Title of host publication2010 IEEE International Ultrasonics Symposium, IUS 2010
Number of pages4
StatePublished - 2010
Event2010 IEEE International Ultrasonics Symposium, IUS 2010 - San Diego, CA, United States
Duration: Oct 11 2010Oct 14 2010

Publication series

NameProceedings - IEEE Ultrasonics Symposium
ISSN (Print)1051-0117


Other2010 IEEE International Ultrasonics Symposium, IUS 2010
Country/TerritoryUnited States
CitySan Diego, CA

All Science Journal Classification (ASJC) codes

  • Acoustics and Ultrasonics


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