A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs

Tomislav Suligoj; Haitao Liu; Johnny K.O. Sin; Kenneth Tsui; Rongming Chu; Kevin J. Chen; Petar Biljanovic; Kang L. Wang

doi:10.1016/j.sse.2004.05.075

A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs

Tomislav Suligoj, Haitao Liu, Johnny K.O. Sin, Kenneth Tsui, Rongming Chu, Kevin J. Chen, Petar Biljanovic, Kang L. Wang

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A novel Horizontal Current Bipolar Transistor (HCBT) is processed with the scaled down dimensions and the improved technology. The active transistor region is built in the defect-free sidewall of the 580 nm wide n-hills in the (110) wafer, implying the reduction of the parasitic region's volume, i.e. the extrinsic base and the collector. The fabricated HCBT exhibits the cutoff frequency (f_T) of 21.4 GHz, the maximum frequency of oscillations (f_max) of 32.6 GHz and the collector-emitter breakdown voltage (BV_CEO) of 5.6 V, which are the highest f_T and the highest f_TBV_CEO product among the lateral bipolar transistors (LBTs).

Original language	English (US)
Pages (from-to)	2047-2050
Number of pages	4
Journal	Solid-State Electronics
Volume	48
Issue number	10-11
DOIs	https://doi.org/10.1016/j.sse.2004.05.075
State	Published - Oct 1 2004

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/j.sse.2004.05.075

Cite this

@article{b7ef4569f4fe45ce8e8ed488f4ed2bc5,

title = "A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs",

abstract = "A novel Horizontal Current Bipolar Transistor (HCBT) is processed with the scaled down dimensions and the improved technology. The active transistor region is built in the defect-free sidewall of the 580 nm wide n-hills in the (110) wafer, implying the reduction of the parasitic region's volume, i.e. the extrinsic base and the collector. The fabricated HCBT exhibits the cutoff frequency (fT) of 21.4 GHz, the maximum frequency of oscillations (fmax) of 32.6 GHz and the collector-emitter breakdown voltage (BVCEO) of 5.6 V, which are the highest fT and the highest fTBVCEO product among the lateral bipolar transistors (LBTs).",

author = "Tomislav Suligoj and Haitao Liu and Sin, {Johnny K.O.} and Kenneth Tsui and Rongming Chu and Chen, {Kevin J.} and Petar Biljanovic and Wang, {Kang L.}",

year = "2004",

month = oct,

day = "1",

doi = "10.1016/j.sse.2004.05.075",

language = "English (US)",

volume = "48",

pages = "2047--2050",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "10-11",

}

TY - JOUR

T1 - A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs

AU - Suligoj, Tomislav

AU - Liu, Haitao

AU - Sin, Johnny K.O.

AU - Tsui, Kenneth

AU - Chu, Rongming

AU - Chen, Kevin J.

AU - Biljanovic, Petar

AU - Wang, Kang L.

PY - 2004/10/1

Y1 - 2004/10/1

N2 - A novel Horizontal Current Bipolar Transistor (HCBT) is processed with the scaled down dimensions and the improved technology. The active transistor region is built in the defect-free sidewall of the 580 nm wide n-hills in the (110) wafer, implying the reduction of the parasitic region's volume, i.e. the extrinsic base and the collector. The fabricated HCBT exhibits the cutoff frequency (fT) of 21.4 GHz, the maximum frequency of oscillations (fmax) of 32.6 GHz and the collector-emitter breakdown voltage (BVCEO) of 5.6 V, which are the highest fT and the highest fTBVCEO product among the lateral bipolar transistors (LBTs).

AB - A novel Horizontal Current Bipolar Transistor (HCBT) is processed with the scaled down dimensions and the improved technology. The active transistor region is built in the defect-free sidewall of the 580 nm wide n-hills in the (110) wafer, implying the reduction of the parasitic region's volume, i.e. the extrinsic base and the collector. The fabricated HCBT exhibits the cutoff frequency (fT) of 21.4 GHz, the maximum frequency of oscillations (fmax) of 32.6 GHz and the collector-emitter breakdown voltage (BVCEO) of 5.6 V, which are the highest fT and the highest fTBVCEO product among the lateral bipolar transistors (LBTs).

UR - http://www.scopus.com/inward/record.url?scp=3142764111&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3142764111&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2004.05.075

DO - 10.1016/j.sse.2004.05.075

M3 - Article

AN - SCOPUS:3142764111

SN - 0038-1101

VL - 48

SP - 2047

EP - 2050

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 10-11

ER -

A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this