A low-temperature route for producing epitaxial perovskite superlattice structures on (001)-oriented SrTiO3/Si substrates

Aleksandr V. Plokhikh; Iryna S. Golovina; Matthias Falmbigl; Igor A. Karateev; Alexander L. Vasiliev; Jason Lapano; Roman Engel-Herbert; Jonathan E. Spanier

doi:10.1039/d1tc01988k

A low-temperature route for producing epitaxial perovskite superlattice structures on (001)-oriented SrTiO₃/Si substrates

Aleksandr V. Plokhikh, Iryna S. Golovina, Matthias Falmbigl, Igor A. Karateev, Alexander L. Vasiliev, Jason Lapano, Roman Engel-Herbert, Jonathan E. Spanier

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We report on the formation of epitaxial perovskite oxide superlattice structures by atomic layer deposition (ALD), which are integrated monolithically on Si wafers using a template layer of SrTiO₃deposited by hybrid molecular beam epitaxy. ALD film growth was carried out at 360 °C, which is significantly lower than the typical deposition temperatures for epitaxial perovskite thin films. The high control over the stacking sequence of different constituents is demonstrated in a series of (BaTiO₃)_m/(SrTiO₃)_nsuperlattices with variousm/ncycle ratios. All superlattice structures were coherently strained to the virtual substrate layer of SrTiO₃on Si. Irrespective of them/nsuperlattice sequence, SrTiO₃sublayers retain slight compressive strain which is transmitted to the BaTiO₃layers.

Original language	English (US)
Pages (from-to)	13115-13122
Number of pages	8
Journal	Journal of Materials Chemistry C
Volume	9
Issue number	38
DOIs	https://doi.org/10.1039/d1tc01988k
State	Published - Oct 14 2021

All Science Journal Classification (ASJC) codes

General Chemistry
Materials Chemistry

Access to Document

10.1039/d1tc01988k

Cite this

@article{94fbf98ba160480e84ca2879d5917558,

title = "A low-temperature route for producing epitaxial perovskite superlattice structures on (001)-oriented SrTiO3/Si substrates",

abstract = "We report on the formation of epitaxial perovskite oxide superlattice structures by atomic layer deposition (ALD), which are integrated monolithically on Si wafers using a template layer of SrTiO3deposited by hybrid molecular beam epitaxy. ALD film growth was carried out at 360 °C, which is significantly lower than the typical deposition temperatures for epitaxial perovskite thin films. The high control over the stacking sequence of different constituents is demonstrated in a series of (BaTiO3)m/(SrTiO3)nsuperlattices with variousm/ncycle ratios. All superlattice structures were coherently strained to the virtual substrate layer of SrTiO3on Si. Irrespective of them/nsuperlattice sequence, SrTiO3sublayers retain slight compressive strain which is transmitted to the BaTiO3layers.",

author = "Plokhikh, {Aleksandr V.} and Golovina, {Iryna S.} and Matthias Falmbigl and Karateev, {Igor A.} and Vasiliev, {Alexander L.} and Jason Lapano and Roman Engel-Herbert and Spanier, {Jonathan E.}",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry 2021.",

year = "2021",

month = oct,

day = "14",

doi = "10.1039/d1tc01988k",

language = "English (US)",

volume = "9",

pages = "13115--13122",

journal = "Journal of Materials Chemistry C",

issn = "2050-7534",

publisher = "Royal Society of Chemistry",

number = "38",

}

TY - JOUR

T1 - A low-temperature route for producing epitaxial perovskite superlattice structures on (001)-oriented SrTiO3/Si substrates

AU - Plokhikh, Aleksandr V.

AU - Golovina, Iryna S.

AU - Falmbigl, Matthias

AU - Karateev, Igor A.

AU - Vasiliev, Alexander L.

AU - Lapano, Jason

AU - Engel-Herbert, Roman

AU - Spanier, Jonathan E.

PY - 2021/10/14

Y1 - 2021/10/14

N2 - We report on the formation of epitaxial perovskite oxide superlattice structures by atomic layer deposition (ALD), which are integrated monolithically on Si wafers using a template layer of SrTiO3deposited by hybrid molecular beam epitaxy. ALD film growth was carried out at 360 °C, which is significantly lower than the typical deposition temperatures for epitaxial perovskite thin films. The high control over the stacking sequence of different constituents is demonstrated in a series of (BaTiO3)m/(SrTiO3)nsuperlattices with variousm/ncycle ratios. All superlattice structures were coherently strained to the virtual substrate layer of SrTiO3on Si. Irrespective of them/nsuperlattice sequence, SrTiO3sublayers retain slight compressive strain which is transmitted to the BaTiO3layers.

AB - We report on the formation of epitaxial perovskite oxide superlattice structures by atomic layer deposition (ALD), which are integrated monolithically on Si wafers using a template layer of SrTiO3deposited by hybrid molecular beam epitaxy. ALD film growth was carried out at 360 °C, which is significantly lower than the typical deposition temperatures for epitaxial perovskite thin films. The high control over the stacking sequence of different constituents is demonstrated in a series of (BaTiO3)m/(SrTiO3)nsuperlattices with variousm/ncycle ratios. All superlattice structures were coherently strained to the virtual substrate layer of SrTiO3on Si. Irrespective of them/nsuperlattice sequence, SrTiO3sublayers retain slight compressive strain which is transmitted to the BaTiO3layers.

UR - http://www.scopus.com/inward/record.url?scp=85116611766&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85116611766&partnerID=8YFLogxK

U2 - 10.1039/d1tc01988k

DO - 10.1039/d1tc01988k

M3 - Article

AN - SCOPUS:85116611766

SN - 2050-7534

VL - 9

SP - 13115

EP - 13122

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

IS - 38

ER -

A low-temperature route for producing epitaxial perovskite superlattice structures on (001)-oriented SrTiO₃/Si substrates

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this