Abstract
In this paper, a low-voltage low-power LC-tank oscillator design using the symmetric graphene tunneling field-effect transistor (SymFET) diode is presented. The SymFET takes advantage of the resonant current tunneling through two graphene layers, with a large current peak exhibiting negative differential resistance (NDR) when the drain-to-source voltage aligns the Dirac point. A Verilog-A SymFET model is presented with noise performance for circuit design and evaluation. The NDR phenomenon of the diode-connected SymFET is further explored, and oscillator design considerations are discussed for performance optimization. Simulation results show that the proposed SymFET 3.05 GHz oscillator has a simulated phase noise of -117 dBC/Hz at 1.0 MHz offset, with a power consumption of only 0.23 mW from a 0.30 V supply.
Original language | English (US) |
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Title of host publication | Proceedings of IEEE Computer Society Annual Symposium on VLSI, ISVLSI |
Publisher | IEEE Computer Society |
Pages | 302-307 |
Number of pages | 6 |
ISBN (Electronic) | 9781479937639 |
DOIs | |
State | Published - Sep 18 2014 |
Event | 2014 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2014 - Tampa, United States Duration: Jul 9 2014 → Jul 11 2014 |
Other
Other | 2014 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2014 |
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Country/Territory | United States |
City | Tampa |
Period | 7/9/14 → 7/11/14 |
All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Control and Systems Engineering
- Electrical and Electronic Engineering