A low-voltage low-power LC oscillator using the diode-connected SymFET

Xueqing Li; Wei Yu Tsai; Huichu Liu; Suman Datta; Vijaykrishnan Narayanan

doi:10.1109/ISVLSI.2014.26

A low-voltage low-power LC oscillator using the diode-connected SymFET

Xueqing Li, Wei Yu Tsai, Huichu Liu, Suman Datta, Vijaykrishnan Narayanan

Computer Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

In this paper, a low-voltage low-power LC-tank oscillator design using the symmetric graphene tunneling field-effect transistor (SymFET) diode is presented. The SymFET takes advantage of the resonant current tunneling through two graphene layers, with a large current peak exhibiting negative differential resistance (NDR) when the drain-to-source voltage aligns the Dirac point. A Verilog-A SymFET model is presented with noise performance for circuit design and evaluation. The NDR phenomenon of the diode-connected SymFET is further explored, and oscillator design considerations are discussed for performance optimization. Simulation results show that the proposed SymFET 3.05 GHz oscillator has a simulated phase noise of -117 dBC/Hz at 1.0 MHz offset, with a power consumption of only 0.23 mW from a 0.30 V supply.

Original language	English (US)
Title of host publication	Proceedings of IEEE Computer Society Annual Symposium on VLSI, ISVLSI
Publisher	IEEE Computer Society
Pages	302-307
Number of pages	6
ISBN (Electronic)	9781479937639
DOIs	https://doi.org/10.1109/ISVLSI.2014.26
State	Published - Sep 18 2014
Event	2014 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2014 - Tampa, United States Duration: Jul 9 2014 → Jul 11 2014

Other

Other	2014 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2014
Country/Territory	United States
City	Tampa
Period	7/9/14 → 7/11/14

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Control and Systems Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/ISVLSI.2014.26

Cite this

@inproceedings{47493c0794574556a8629215e56d9018,

title = "A low-voltage low-power LC oscillator using the diode-connected SymFET",

abstract = "In this paper, a low-voltage low-power LC-tank oscillator design using the symmetric graphene tunneling field-effect transistor (SymFET) diode is presented. The SymFET takes advantage of the resonant current tunneling through two graphene layers, with a large current peak exhibiting negative differential resistance (NDR) when the drain-to-source voltage aligns the Dirac point. A Verilog-A SymFET model is presented with noise performance for circuit design and evaluation. The NDR phenomenon of the diode-connected SymFET is further explored, and oscillator design considerations are discussed for performance optimization. Simulation results show that the proposed SymFET 3.05 GHz oscillator has a simulated phase noise of -117 dBC/Hz at 1.0 MHz offset, with a power consumption of only 0.23 mW from a 0.30 V supply.",

author = "Xueqing Li and Tsai, \{Wei Yu\} and Huichu Liu and Suman Datta and Vijaykrishnan Narayanan",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2014 ; Conference date: 09-07-2014 Through 11-07-2014",

year = "2014",

month = sep,

day = "18",

doi = "10.1109/ISVLSI.2014.26",

language = "English (US)",

pages = "302--307",

booktitle = "Proceedings of IEEE Computer Society Annual Symposium on VLSI, ISVLSI",

publisher = "IEEE Computer Society",

address = "United States",

}

Li, X, Tsai, WY, Liu, H, Datta, S & Narayanan, V 2014, A low-voltage low-power LC oscillator using the diode-connected SymFET. in Proceedings of IEEE Computer Society Annual Symposium on VLSI, ISVLSI., 6903380, IEEE Computer Society, pp. 302-307, 2014 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2014, Tampa, United States, 7/9/14. https://doi.org/10.1109/ISVLSI.2014.26

TY - GEN

T1 - A low-voltage low-power LC oscillator using the diode-connected SymFET

AU - Li, Xueqing

AU - Tsai, Wei Yu

AU - Liu, Huichu

AU - Datta, Suman

AU - Narayanan, Vijaykrishnan

PY - 2014/9/18

Y1 - 2014/9/18

N2 - In this paper, a low-voltage low-power LC-tank oscillator design using the symmetric graphene tunneling field-effect transistor (SymFET) diode is presented. The SymFET takes advantage of the resonant current tunneling through two graphene layers, with a large current peak exhibiting negative differential resistance (NDR) when the drain-to-source voltage aligns the Dirac point. A Verilog-A SymFET model is presented with noise performance for circuit design and evaluation. The NDR phenomenon of the diode-connected SymFET is further explored, and oscillator design considerations are discussed for performance optimization. Simulation results show that the proposed SymFET 3.05 GHz oscillator has a simulated phase noise of -117 dBC/Hz at 1.0 MHz offset, with a power consumption of only 0.23 mW from a 0.30 V supply.

AB - In this paper, a low-voltage low-power LC-tank oscillator design using the symmetric graphene tunneling field-effect transistor (SymFET) diode is presented. The SymFET takes advantage of the resonant current tunneling through two graphene layers, with a large current peak exhibiting negative differential resistance (NDR) when the drain-to-source voltage aligns the Dirac point. A Verilog-A SymFET model is presented with noise performance for circuit design and evaluation. The NDR phenomenon of the diode-connected SymFET is further explored, and oscillator design considerations are discussed for performance optimization. Simulation results show that the proposed SymFET 3.05 GHz oscillator has a simulated phase noise of -117 dBC/Hz at 1.0 MHz offset, with a power consumption of only 0.23 mW from a 0.30 V supply.

UR - https://www.scopus.com/pages/publications/84908217418

UR - https://www.scopus.com/inward/citedby.url?scp=84908217418&partnerID=8YFLogxK

U2 - 10.1109/ISVLSI.2014.26

DO - 10.1109/ISVLSI.2014.26

M3 - Conference contribution

AN - SCOPUS:84908217418

SP - 302

EP - 307

BT - Proceedings of IEEE Computer Society Annual Symposium on VLSI, ISVLSI

PB - IEEE Computer Society

T2 - 2014 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2014

Y2 - 9 July 2014 through 11 July 2014

ER -

A low-voltage low-power LC oscillator using the diode-connected SymFET

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