A mobility study of monolayer MoS2on low-κ/high-κ dielectrics

Zheng Sun, Cindy Chen, Joshua A. Robinson, Zhihong Chen, Joerg Appenzeller

Research output: Contribution to journalConference articlepeer-review

Abstract

The dielectric environment plays a significant role in the performance of transition metal dichalcogenide FETs. In a previous study, a low mobility of monolayer (ML) MoS2 was extracted when located on an ultrathin dielectric [1]. Here, we have performed a comparative study of ML MoS2 on a number of low-κ/high-κ dielectrics and found that the mobility does not depend on the choice of dielectric if an 'air gap' between the MoS2 and the dielectric is accounted for. This implies that remote phonon scattering plays a small or no role for the transport in MoS2. Moreover, we observed that mobility is independent on carrier concentrations and limited by intrinsic phonon scattering for both low-κ/high-κ dielectrics.

Original languageEnglish (US)
JournalDevice Research Conference - Conference Digest, DRC
Volume2023-January
DOIs
StatePublished - 2023
Event2023 Device Research Conference, DRC 2023 - Santa Barbara, United States
Duration: Jun 25 2023Jun 28 2023

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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