A model for NBTI in nitrided oxide MOSFETs which does not involve hydrogen or diffusion

Chemical Compounds

• Silicon Dioxide 56%
• Diffusion 43%
• Interface Trap 38%
• Oxide 37%
• Hydrogen 35%
• Field Effect 23%
• EPR Spectroscopy 20%
• Time 16%
• Nitrogen 14%
• Chemistry 13%
• Purity 11%

Engineering & Materials Science

• Negative bias temperature instability 100%
• Oxides 59%
• Hydrogen 55%
• Defects 17%
• Silica 13%
• Silicon 9%
• Silicon oxides 9%
• Paramagnetic resonance 8%
• Recovery 8%
• Field effect transistors 6%
• Nitrogen 5%
• Metals 4%