A model of hole trapping in SiO2 films on silicon

P. M. Lenahan; J. F. Conley; B. D. Wallace

doi:10.1063/1.365438

A model of hole trapping in SiO₂ films on silicon

P. M. Lenahan
, J. F. Conley
, B. D. Wallace

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

We demonstrate that hole trap densities and hole trapping in SiO₂ films on silicon can be predicted quantitatively using a physically based model of intrinsic oxide trapping centers.

Original language	English (US)
Pages (from-to)	6822-6824
Number of pages	3
Journal	Journal of Applied Physics
Volume	81
Issue number	10
DOIs	https://doi.org/10.1063/1.365438
State	Published - May 15 1997

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.365438

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@article{13e95b8fa68048a5a2107956f7c60139,

title = "A model of hole trapping in SiO2 films on silicon",

abstract = "We demonstrate that hole trap densities and hole trapping in SiO2 films on silicon can be predicted quantitatively using a physically based model of intrinsic oxide trapping centers.",

author = "Lenahan, \{P. M.\} and Conley, \{J. F.\} and Wallace, \{B. D.\}",

year = "1997",

month = may,

day = "15",

doi = "10.1063/1.365438",

language = "English (US)",

volume = "81",

pages = "6822--6824",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - A model of hole trapping in SiO2 films on silicon

AU - Lenahan, P. M.

AU - Conley, J. F.

AU - Wallace, B. D.

PY - 1997/5/15

Y1 - 1997/5/15

N2 - We demonstrate that hole trap densities and hole trapping in SiO2 films on silicon can be predicted quantitatively using a physically based model of intrinsic oxide trapping centers.

AB - We demonstrate that hole trap densities and hole trapping in SiO2 films on silicon can be predicted quantitatively using a physically based model of intrinsic oxide trapping centers.

UR - https://www.scopus.com/pages/publications/0000583521

UR - https://www.scopus.com/pages/publications/0000583521#tab=citedBy

U2 - 10.1063/1.365438

DO - 10.1063/1.365438

M3 - Article

AN - SCOPUS:0000583521

SN - 0021-8979

VL - 81

SP - 6822

EP - 6824

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

A model of hole trapping in SiO₂ films on silicon

Abstract

All Science Journal Classification (ASJC) codes

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