TY - GEN
T1 - A modified inductively coupled plasma for high-speed, ultra-smooth reactive phase etching of silica glass
AU - Zhang, C.
AU - Hatipoglu, G.
AU - Tadigadapa, S.
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/8/5
Y1 - 2015/8/5
N2 - We report on the etching of borosilicate glass substrates in a conventional and modified inductively coupled plasma - reactive ion etch (ICP-RIE) tool. We present the etch rates and surface roughness of borosilicate glass in various fluorine based plasmas using C4F8, SF6, Ar, NF3, and H2O gases. In the conventional ICP-RIE etching mode an etch rate of 0.55 μm/min at a rms surface roughness of 25 nm was obtained at C4F8, SF6 flow rates of 5 sccm, O2 flow rate of 50 sccm, 2000 W of ICP power, 475 W of substrate power. A maximum etch rate of 0.67μm/min was obtained at a high rms surface roughness of 450 nm by increasing flow rate of C4F8 to 50 sccm. Using the modified ICP-RIE system consisting of a gas diffuser ring clamped to the substrate holder, the physical component of the etching was considerably reduced and we have been able to achieve etch rates ∼0.72 μm/min with surface smoothness of ∼1 nm for borosilicate glass and fused silica respectively after 5 minutes etches.
AB - We report on the etching of borosilicate glass substrates in a conventional and modified inductively coupled plasma - reactive ion etch (ICP-RIE) tool. We present the etch rates and surface roughness of borosilicate glass in various fluorine based plasmas using C4F8, SF6, Ar, NF3, and H2O gases. In the conventional ICP-RIE etching mode an etch rate of 0.55 μm/min at a rms surface roughness of 25 nm was obtained at C4F8, SF6 flow rates of 5 sccm, O2 flow rate of 50 sccm, 2000 W of ICP power, 475 W of substrate power. A maximum etch rate of 0.67μm/min was obtained at a high rms surface roughness of 450 nm by increasing flow rate of C4F8 to 50 sccm. Using the modified ICP-RIE system consisting of a gas diffuser ring clamped to the substrate holder, the physical component of the etching was considerably reduced and we have been able to achieve etch rates ∼0.72 μm/min with surface smoothness of ∼1 nm for borosilicate glass and fused silica respectively after 5 minutes etches.
UR - http://www.scopus.com/inward/record.url?scp=84955505720&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84955505720&partnerID=8YFLogxK
U2 - 10.1109/TRANSDUCERS.2015.7180993
DO - 10.1109/TRANSDUCERS.2015.7180993
M3 - Conference contribution
AN - SCOPUS:84955505720
T3 - 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015
SP - 592
EP - 595
BT - 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015
Y2 - 21 June 2015 through 25 June 2015
ER -