A monolithically integrated bacteriorhodopsin/GaAs MODFET bio-photoreceiver

J. Xu; P. Bhattacharya; G. Varo

doi:10.1109/LEOS.2001.969074

A monolithically integrated bacteriorhodopsin/GaAs MODFET bio-photoreceiver

J. Xu, P. Bhattacharya, G. Varo

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The first monolithic integration of selectively deposited bacteriorhodopsin (bR), acting as a photodetector, with a GaAs-based modulation doped field effect transistor (MODFET) was presented. The photovoltage developed across the bR was applied across the gate of the FET along with the conversion of the large photovoltage to a photocurrent. Molecular beam epitaxy (MBE) was employed for the growth of GaAs based MODFET heterostructure while the 1-μm gate transistors were made by standard photolithography, wet etching and metalization techniques. The sensors were assumed to be very useful for imaging arrays and artificial vision applications.

Original language	English (US)
Pages (from-to)	833-834
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2
DOIs	https://doi.org/10.1109/LEOS.2001.969074
State	Published - 2001

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LEOS.2001.969074

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abstract = "The first monolithic integration of selectively deposited bacteriorhodopsin (bR), acting as a photodetector, with a GaAs-based modulation doped field effect transistor (MODFET) was presented. The photovoltage developed across the bR was applied across the gate of the FET along with the conversion of the large photovoltage to a photocurrent. Molecular beam epitaxy (MBE) was employed for the growth of GaAs based MODFET heterostructure while the 1-μm gate transistors were made by standard photolithography, wet etching and metalization techniques. The sensors were assumed to be very useful for imaging arrays and artificial vision applications.",

author = "J. Xu and P. Bhattacharya and G. Varo",

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doi = "10.1109/LEOS.2001.969074",

language = "English (US)",

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AU - Bhattacharya, P.

AU - Varo, G.

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Y1 - 2001

N2 - The first monolithic integration of selectively deposited bacteriorhodopsin (bR), acting as a photodetector, with a GaAs-based modulation doped field effect transistor (MODFET) was presented. The photovoltage developed across the bR was applied across the gate of the FET along with the conversion of the large photovoltage to a photocurrent. Molecular beam epitaxy (MBE) was employed for the growth of GaAs based MODFET heterostructure while the 1-μm gate transistors were made by standard photolithography, wet etching and metalization techniques. The sensors were assumed to be very useful for imaging arrays and artificial vision applications.

AB - The first monolithic integration of selectively deposited bacteriorhodopsin (bR), acting as a photodetector, with a GaAs-based modulation doped field effect transistor (MODFET) was presented. The photovoltage developed across the bR was applied across the gate of the FET along with the conversion of the large photovoltage to a photocurrent. Molecular beam epitaxy (MBE) was employed for the growth of GaAs based MODFET heterostructure while the 1-μm gate transistors were made by standard photolithography, wet etching and metalization techniques. The sensors were assumed to be very useful for imaging arrays and artificial vision applications.

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JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

ER -

A monolithically integrated bacteriorhodopsin/GaAs MODFET bio-photoreceiver

Abstract

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