TY - JOUR
T1 - A neuromime in VLSI
AU - Wolpert, Seth
AU - Micheli-Tzanakou, Evangelia
N1 - Funding Information:
Manuscript received April 17, 1993; revised October 31, 1994 and September 8, 1995. This work was supported by NSF Grant MIF-9210945. S. Wolpert is with the School of Science, Engineering, and Technology, Penn State University-Harrisburg, Middletown, PA 17057-4898 USA. E. Micheli-Tzanakou is with the Department of Biomedical Engineering, Rutgers University, Piscataway, NJ 08904 USA. Publisher Item Identifier S 1045-9227(96)01252-0.
PY - 1996
Y1 - 1996
N2 - Using conventional very large scale integration (VLSI) technology, a flexible and comprehensive neuromime circuit has been implemented in silicon for the purpose of modeling nerve networks from living organisms. Based on the "integrate-and-fire" model of neuronal threshold, the circuit was fabricated in two-micron compliemntary metal-oxide semiconductor (CMOS) with double-level metal. It occupies 0.6 square millimeters of die area, and requires only a few passive biasing components off-chip. The neuromime circuit offers many continuously variable parameters, including excitatory and inhibitory sensitivity and persistence, refractory duration and strength, and overall speed of operation. The circuit offers free and continuous access to waveforms for presynaptic membrane potential, postsynaptic membrane potential, and threshold potential. As such, it is amenable to many secondary behavioral characteristics, such as postinhibitory rebound, fatigue, facilitation, and accommodation. Being power-efficient, compact, and noise immune, it is ideal for assembly into networks and interfacing to biological counterparts.
AB - Using conventional very large scale integration (VLSI) technology, a flexible and comprehensive neuromime circuit has been implemented in silicon for the purpose of modeling nerve networks from living organisms. Based on the "integrate-and-fire" model of neuronal threshold, the circuit was fabricated in two-micron compliemntary metal-oxide semiconductor (CMOS) with double-level metal. It occupies 0.6 square millimeters of die area, and requires only a few passive biasing components off-chip. The neuromime circuit offers many continuously variable parameters, including excitatory and inhibitory sensitivity and persistence, refractory duration and strength, and overall speed of operation. The circuit offers free and continuous access to waveforms for presynaptic membrane potential, postsynaptic membrane potential, and threshold potential. As such, it is amenable to many secondary behavioral characteristics, such as postinhibitory rebound, fatigue, facilitation, and accommodation. Being power-efficient, compact, and noise immune, it is ideal for assembly into networks and interfacing to biological counterparts.
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U2 - 10.1109/72.485633
DO - 10.1109/72.485633
M3 - Article
C2 - 18255584
AN - SCOPUS:0030107377
SN - 1045-9227
VL - 7
SP - 300
EP - 306
JO - IEEE Transactions on Neural Networks
JF - IEEE Transactions on Neural Networks
IS - 2
ER -