A new approach to electrically detected magnetic resonance: Spin-dependent transient spectroscopy

Kenneth J. Myers, Patrick M. Lenahan, James P. Ashton, Jason T. Ryan

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


Electrically detected magnetic resonance (EDMR) is arguably the most sensitive method available to study electrically active point defects in semiconductor devices. Most EDMR studies have utilized spin-dependent recombination current and, thus, require p-n junctions or a photoconductive structure. Some time ago, Chen and Lang proposed and demonstrated EDMR via spin-dependent deep level transient spectroscopy in metal-oxide-semiconductor capacitors. We report on a similar and significantly simpler technique: spin-dependent transient spectroscopy (SDTS). We show that the sensitivity of this technique is independent of the resonance field and frequency. Through capacitance-voltage analysis, combined with our SDTS results, this technique can (crudely) provide information about the density of states of defects with a broad distribution of energy levels. In addition, we show that SDTS can be readily adapted to near-zero-field magnetoresistance effect measurements.

Original languageEnglish (US)
Article number115301
JournalJournal of Applied Physics
Issue number11
StatePublished - Sep 21 2022

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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