A new CVD reaction for atomic layer deposition of silicon

C. M. Chiang; J. E. Rowe; R. A. Malic; A. Sen; M. L. Steigerwald; A. P. Mills

doi:10.1016/S0169-4332(96)00515-6

A new CVD reaction for atomic layer deposition of silicon

C. M. Chiang, J. E. Rowe, R. A. Malic, A. Sen, M. L. Steigerwald, A. P. Mills

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We have investigated a new reaction pathway for atomic layer deposition of Si on various metal and semiconductor substrates using a novel organosilicon compound, Si(C ₆ H ₁₀ ) ₂ , which has a central Si atom with two identical 5-fold hydrocarbon rings. Upon reaction with the substrate the hydrocarbon rings are expected to transform into dimethylbutadiene (C ₆ H ₁₀ ), which is very volatile and should readily desorb, thereby leaving the Si core atoms adsorbed on the surface. High purity vapor sources of Si(C ₆ H ₁₀ ) ₂ were prepared and introduced into a multi-technique ultrahigh vacuum (UHV) chamber. Si(C ₆ H ₁₀ ) ₂ molecule was initially physisorbed at liquid nitrogen temperature (∼ 100 K) at a pressure of 1.0 × 10 ^-6 Torr to either monolayer or multi-layer thickness on substrates. Infrared reflection-absorption spectroscopy (IRAS) and core-level X-ray photoelectron spectroscopy (XPS) of the Si(2p) have shown evidence of an adsorbed 'silylene' species formed at 200 K due to the loss of one 5-fold hydrocarbon ring. Thermal desorption data support the dissociation of the molecule and the liberation of the hydrocarbon reaction product, dimethylbutadiene. However, upon further heating the 'silylene' species decomposes non-selectively to produce both silicon deposition and carbon contamination.

Original language	English (US)
Pages (from-to)	189-196
Number of pages	8
Journal	Applied Surface Science
Volume	107
DOIs	https://doi.org/10.1016/S0169-4332(96)00515-6
State	Published - Nov 1996

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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@article{8733565f17824181b43d8a6aa3ef9065,

title = "A new CVD reaction for atomic layer deposition of silicon",

abstract = " We have investigated a new reaction pathway for atomic layer deposition of Si on various metal and semiconductor substrates using a novel organosilicon compound, Si(C 6 H 10 ) 2 , which has a central Si atom with two identical 5-fold hydrocarbon rings. Upon reaction with the substrate the hydrocarbon rings are expected to transform into dimethylbutadiene (C 6 H 10 ), which is very volatile and should readily desorb, thereby leaving the Si core atoms adsorbed on the surface. High purity vapor sources of Si(C 6 H 10 ) 2 were prepared and introduced into a multi-technique ultrahigh vacuum (UHV) chamber. Si(C 6 H 10 ) 2 molecule was initially physisorbed at liquid nitrogen temperature (∼ 100 K) at a pressure of 1.0 × 10 -6 Torr to either monolayer or multi-layer thickness on substrates. Infrared reflection-absorption spectroscopy (IRAS) and core-level X-ray photoelectron spectroscopy (XPS) of the Si(2p) have shown evidence of an adsorbed 'silylene' species formed at 200 K due to the loss of one 5-fold hydrocarbon ring. Thermal desorption data support the dissociation of the molecule and the liberation of the hydrocarbon reaction product, dimethylbutadiene. However, upon further heating the 'silylene' species decomposes non-selectively to produce both silicon deposition and carbon contamination. ",

author = "Chiang, {C. M.} and Rowe, {J. E.} and Malic, {R. A.} and A. Sen and Steigerwald, {M. L.} and Mills, {A. P.}",

year = "1996",

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doi = "10.1016/S0169-4332(96)00515-6",

language = "English (US)",

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pages = "189--196",

journal = "Applied Surface Science",

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T1 - A new CVD reaction for atomic layer deposition of silicon

AU - Chiang, C. M.

AU - Rowe, J. E.

AU - Malic, R. A.

AU - Sen, A.

AU - Steigerwald, M. L.

AU - Mills, A. P.

PY - 1996/11

Y1 - 1996/11

N2 - We have investigated a new reaction pathway for atomic layer deposition of Si on various metal and semiconductor substrates using a novel organosilicon compound, Si(C 6 H 10 ) 2 , which has a central Si atom with two identical 5-fold hydrocarbon rings. Upon reaction with the substrate the hydrocarbon rings are expected to transform into dimethylbutadiene (C 6 H 10 ), which is very volatile and should readily desorb, thereby leaving the Si core atoms adsorbed on the surface. High purity vapor sources of Si(C 6 H 10 ) 2 were prepared and introduced into a multi-technique ultrahigh vacuum (UHV) chamber. Si(C 6 H 10 ) 2 molecule was initially physisorbed at liquid nitrogen temperature (∼ 100 K) at a pressure of 1.0 × 10 -6 Torr to either monolayer or multi-layer thickness on substrates. Infrared reflection-absorption spectroscopy (IRAS) and core-level X-ray photoelectron spectroscopy (XPS) of the Si(2p) have shown evidence of an adsorbed 'silylene' species formed at 200 K due to the loss of one 5-fold hydrocarbon ring. Thermal desorption data support the dissociation of the molecule and the liberation of the hydrocarbon reaction product, dimethylbutadiene. However, upon further heating the 'silylene' species decomposes non-selectively to produce both silicon deposition and carbon contamination.

AB - We have investigated a new reaction pathway for atomic layer deposition of Si on various metal and semiconductor substrates using a novel organosilicon compound, Si(C 6 H 10 ) 2 , which has a central Si atom with two identical 5-fold hydrocarbon rings. Upon reaction with the substrate the hydrocarbon rings are expected to transform into dimethylbutadiene (C 6 H 10 ), which is very volatile and should readily desorb, thereby leaving the Si core atoms adsorbed on the surface. High purity vapor sources of Si(C 6 H 10 ) 2 were prepared and introduced into a multi-technique ultrahigh vacuum (UHV) chamber. Si(C 6 H 10 ) 2 molecule was initially physisorbed at liquid nitrogen temperature (∼ 100 K) at a pressure of 1.0 × 10 -6 Torr to either monolayer or multi-layer thickness on substrates. Infrared reflection-absorption spectroscopy (IRAS) and core-level X-ray photoelectron spectroscopy (XPS) of the Si(2p) have shown evidence of an adsorbed 'silylene' species formed at 200 K due to the loss of one 5-fold hydrocarbon ring. Thermal desorption data support the dissociation of the molecule and the liberation of the hydrocarbon reaction product, dimethylbutadiene. However, upon further heating the 'silylene' species decomposes non-selectively to produce both silicon deposition and carbon contamination.

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JO - Applied Surface Science

JF - Applied Surface Science

ER -

A new CVD reaction for atomic layer deposition of silicon

Abstract

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