Abstract
A silicon-based photoconductive microwave switch has been designed and fabricated within a coplanar waveguide on a high resistivity Si substrate. This device offers improved signal attenuation per incident optical power when compared with other types of optically controlled attenuators that have been reported. Attenuation of more than 30 dB was achieved by illumination from a single infrared LED.
Original language | English (US) |
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Pages (from-to) | 248-252 |
Number of pages | 5 |
Journal | Microwave and Optical Technology Letters |
Volume | 51 |
Issue number | 1 |
DOIs | |
State | Published - Jan 2009 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering