@inproceedings{e668c5d422b94c5e8addde46868255ef,
title = "A new technique for analyzing defects in silicon carbide devices: Electrically detected electron nuclear double resonance",
abstract = "We show that electrically detected electron nuclear double resonance (EDENDOR) can be detected with relatively high signal-to-noise ratios in fully processed 4H-SiC bipolar junction transistors (BJTs). We observe EDENDOR of nitrogen interacting with recombination center defects in the depletion region of forward-biased emitter-base junctions of these devices at room temperature. Our results indicate that EDENDOR has great potential in the investigation of SiC-based devices specifically, as well as in the investigation of solid-state devices based upon other material systems.",
author = "Waskiewicz, {Ryan J.} and Manning, {Brian R.} and McCrory, {Duane J.} and Lenahan, {Patrick M.}",
note = "Funding Information: This work was supported by the Air Force Office of Scientific Research under award number NO. FA9550-17-1-0242. Publisher Copyright: {\textcopyright} 2020 Trans Tech Publications Ltd, Switzerland.; 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 ; Conference date: 29-09-2019 Through 04-10-2019",
year = "2020",
doi = "10.4028/www.scientific.net/MSF.1004.306",
language = "English (US)",
isbn = "9783035715798",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "306--313",
editor = "Hiroshi Yano and Takeshi Ohshima and Kazuma Eto and Takeshi Mitani and Shinsuke Harada and Yasunori Tanaka",
booktitle = "Silicon Carbide and Related Materials 2019",
}