A nitrogen-related deep level defect in ion implanted 4H-SiC pn junctions-A spin dependent recombination study

Thomas Aichinger; Patrick M. Lenahan; Blair R. Tuttle; Dethard Peters

doi:10.1063/1.3695330

A nitrogen-related deep level defect in ion implanted 4H-SiC pn junctions-A spin dependent recombination study

Thomas Aichinger, Patrick M. Lenahan, Blair R. Tuttle, Dethard Peters

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Abstract

Nitrogen implantation creates a high density of recombination centers in SiC which can degrade the performance of ion implanted pn junctions. We use spin dependent recombination (SDR) to identify deep level defects associated with these centers. We find a dominating SDR spectrum with three strong lines of equal intensity. The SDR pattern indicates that the observed center is a defect complex involving nitrogen.

Original language	English (US)
Article number	112113
Journal	Applied Physics Letters
Volume	100
Issue number	11
DOIs	https://doi.org/10.1063/1.3695330
State	Published - Mar 12 2012

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3695330

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title = "A nitrogen-related deep level defect in ion implanted 4H-SiC pn junctions-A spin dependent recombination study",

abstract = "Nitrogen implantation creates a high density of recombination centers in SiC which can degrade the performance of ion implanted pn junctions. We use spin dependent recombination (SDR) to identify deep level defects associated with these centers. We find a dominating SDR spectrum with three strong lines of equal intensity. The SDR pattern indicates that the observed center is a defect complex involving nitrogen.",

author = "Thomas Aichinger and Lenahan, {Patrick M.} and Tuttle, {Blair R.} and Dethard Peters",

note = "Funding Information: Blair Tuttle was supported by the Penn State Collaboration Fellowship and by the National Science Foundation via Grant No. DMR-0907385. The work at Penn State was also supported in part by the Infineon Technologies, Austria, the U.S. Army Research Laboratory, and through General Electric under the U.S. Department of Commerce under Award No. NIST 60NANB10D109. ",

year = "2012",

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doi = "10.1063/1.3695330",

language = "English (US)",

volume = "100",

journal = "Applied Physics Letters",

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T1 - A nitrogen-related deep level defect in ion implanted 4H-SiC pn junctions-A spin dependent recombination study

AU - Aichinger, Thomas

AU - Lenahan, Patrick M.

AU - Tuttle, Blair R.

AU - Peters, Dethard

N1 - Funding Information: Blair Tuttle was supported by the Penn State Collaboration Fellowship and by the National Science Foundation via Grant No. DMR-0907385. The work at Penn State was also supported in part by the Infineon Technologies, Austria, the U.S. Army Research Laboratory, and through General Electric under the U.S. Department of Commerce under Award No. NIST 60NANB10D109.

PY - 2012/3/12

Y1 - 2012/3/12

N2 - Nitrogen implantation creates a high density of recombination centers in SiC which can degrade the performance of ion implanted pn junctions. We use spin dependent recombination (SDR) to identify deep level defects associated with these centers. We find a dominating SDR spectrum with three strong lines of equal intensity. The SDR pattern indicates that the observed center is a defect complex involving nitrogen.

AB - Nitrogen implantation creates a high density of recombination centers in SiC which can degrade the performance of ion implanted pn junctions. We use spin dependent recombination (SDR) to identify deep level defects associated with these centers. We find a dominating SDR spectrum with three strong lines of equal intensity. The SDR pattern indicates that the observed center is a defect complex involving nitrogen.

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DO - 10.1063/1.3695330

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VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 112113

ER -

A nitrogen-related deep level defect in ion implanted 4H-SiC pn junctions-A spin dependent recombination study

Abstract

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