TY - JOUR
T1 - A novel integrated decoupling capacitor for MCM-L technology
AU - Chahal, Premjeet
AU - Tummala, Rao R.
AU - Allen, Mark G.
AU - Swaminathan, Madhavan
N1 - Funding Information:
Manuscript received September 29, 1997; revised February 18, 1998. This work was supported by the National Science Foundation through the Georgia Tech/NSF Engineering Research Center in Electronic Packaging, Contract EEC-9402723. The authors are with the Georgia Institute of Technology, Atlanta, GA 30332-0560 USA Publisher Item Identifier S 1070-9894(98)02912-0.
PY - 1998/5
Y1 - 1998/5
N2 - This paper discusses the design, materials, fabrication, and measurements of a novel integrated decoupling capacitor for MCM-L-based substrates. Based on modeling using the Semiconductor Industry Association Roadmap, it has been estimated that 13-72 nF/cm2 of specific decoupling capacitance will be required for the next decade. The capacitor in this paper addresses this need. The fabrication of the capacitor has been achieved using filled polymer materials in thin film form, with via diameters of 100 μm and below, through photodefinable processes. Dielectric constant as high as 65 with loss tangent below 0.05 and specific capacitance of 22 nF/cm2 have been achieved. The scattering parameters were measured up to 20 GHz using a network analyzer for various capacitor structures (varying geometry and dielectric thickness) to study input impedance and scaling of the devices.
AB - This paper discusses the design, materials, fabrication, and measurements of a novel integrated decoupling capacitor for MCM-L-based substrates. Based on modeling using the Semiconductor Industry Association Roadmap, it has been estimated that 13-72 nF/cm2 of specific decoupling capacitance will be required for the next decade. The capacitor in this paper addresses this need. The fabrication of the capacitor has been achieved using filled polymer materials in thin film form, with via diameters of 100 μm and below, through photodefinable processes. Dielectric constant as high as 65 with loss tangent below 0.05 and specific capacitance of 22 nF/cm2 have been achieved. The scattering parameters were measured up to 20 GHz using a network analyzer for various capacitor structures (varying geometry and dielectric thickness) to study input impedance and scaling of the devices.
UR - http://www.scopus.com/inward/record.url?scp=0032069386&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032069386&partnerID=8YFLogxK
U2 - 10.1109/96.673707
DO - 10.1109/96.673707
M3 - Article
AN - SCOPUS:0032069386
SN - 1070-9894
VL - 21
SP - 184
EP - 192
JO - IEEE transactions on components, packaging, and manufacturing technology. Part B, Advanced packaging
JF - IEEE transactions on components, packaging, and manufacturing technology. Part B, Advanced packaging
IS - 2
ER -