A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing

Y. J. Lee; T. C. Cho; K. H. Kao; P. J. Sung; F. K. Hsueh; P. C. Huang; C. T. Wu; S. H. Hsu; W. H. Huang; H. C. Chen; Y. Li; M. I. Current; B. Hengstebeck; J. Marino; T. Büyüklimanli; J. M. Shieh; T. S. Chao; W. F. Wu; W. K. Yeh

doi:10.1109/IEDM.2014.7047158

A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing

Y. J. Lee, T. C. Cho, K. H. Kao, P. J. Sung, F. K. Hsueh, P. C. Huang, C. T. Wu, S. H. Hsu, W. H. Huang, H. C. Chen, Y. Li, M. I. Current, B. Hengstebeck, J. Marino, T. Büyüklimanli, J. M. Shieh, T. S. Chao, W. F. Wu, W. K. Yeh

Materials Research Institute (MRI)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

30 Scopus citations

Abstract

For the first time, a novel junctionless (JL) FinFET structure with a shell doping profile (SDP) formed by molecular monolayer doping (MLD) method and microwave annealing (MWA) at low temperature is proposed and studied. Thanks to the ultra thin SDP leading to an easily-depleted channel, the proposed JLFinFET can retain the ideal subthreshold swing (∼ 60 mV/dec) at a high doping level according to simulations. Poly Si based JLFinFETs processed with MLD and MWA exhibit superior subthreshold swing (S.S. ∼ 67mV/dec) and excellent on-off ratio (>10⁶) for both n and p channel devices. Threshold voltage (V_TH) variation due to random dopant fluctuation (RDF) is reduced in MLD-JLFinFETs, which can be attributed to the molecule self-limiting property of MLD on the Si surface and quasi-diffusionless MWA at low temperature. Our results reveal the potential of the proposed SDP enabling a JLFET showing reduced variation and outstanding performance for low power applications.

Original language	English (US)
Title of host publication	2014 IEEE International Electron Devices Meeting, IEDM 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	32.7.1-32.7.4
Edition	February
ISBN (Electronic)	9781479980017
DOIs	https://doi.org/10.1109/IEDM.2014.7047158
State	Published - Feb 20 2015
Event	2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States Duration: Dec 15 2014 → Dec 17 2014

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Number	February
Volume	2015-February
ISSN (Print)	0163-1918

Other

Other	2014 60th IEEE International Electron Devices Meeting, IEDM 2014
Country/Territory	United States
City	San Francisco
Period	12/15/14 → 12/17/14

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2014.7047158

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Lee, Y. J., Cho, T. C., Kao, K. H., Sung, P. J., Hsueh, F. K., Huang, P. C., Wu, C. T., Hsu, S. H., Huang, W. H., Chen, H. C., Li, Y., Current, M. I., Hengstebeck, B., Marino, J., Büyüklimanli, T., Shieh, J. M., Chao, T. S., Wu, W. F., & Yeh, W. K. (2015). A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing. In 2014 IEEE International Electron Devices Meeting, IEDM 2014 (February ed., pp. 32.7.1-32.7.4). Article 7047158 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2014.7047158

Lee, Y. J. ; Cho, T. C. ; Kao, K. H. et al. / A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing. 2014 IEEE International Electron Devices Meeting, IEDM 2014. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 32.7.1-32.7.4 (Technical Digest - International Electron Devices Meeting, IEDM; February).

@inproceedings{3bbb9f3721024a059c21ecf9d8ecdf2c,

title = "A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing",

abstract = "For the first time, a novel junctionless (JL) FinFET structure with a shell doping profile (SDP) formed by molecular monolayer doping (MLD) method and microwave annealing (MWA) at low temperature is proposed and studied. Thanks to the ultra thin SDP leading to an easily-depleted channel, the proposed JLFinFET can retain the ideal subthreshold swing (∼ 60 mV/dec) at a high doping level according to simulations. Poly Si based JLFinFETs processed with MLD and MWA exhibit superior subthreshold swing (S.S. ∼ 67mV/dec) and excellent on-off ratio (>106) for both n and p channel devices. Threshold voltage (VTH) variation due to random dopant fluctuation (RDF) is reduced in MLD-JLFinFETs, which can be attributed to the molecule self-limiting property of MLD on the Si surface and quasi-diffusionless MWA at low temperature. Our results reveal the potential of the proposed SDP enabling a JLFET showing reduced variation and outstanding performance for low power applications.",

author = "Lee, {Y. J.} and Cho, {T. C.} and Kao, {K. H.} and Sung, {P. J.} and Hsueh, {F. K.} and Huang, {P. C.} and Wu, {C. T.} and Hsu, {S. H.} and Huang, {W. H.} and Chen, {H. C.} and Y. Li and Current, {M. I.} and B. Hengstebeck and J. Marino and T. B{\"u}y{\"u}klimanli and Shieh, {J. M.} and Chao, {T. S.} and Wu, {W. F.} and Yeh, {W. K.}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 60th IEEE International Electron Devices Meeting, IEDM 2014 ; Conference date: 15-12-2014 Through 17-12-2014",

year = "2015",

month = feb,

day = "20",

doi = "10.1109/IEDM.2014.7047158",

language = "English (US)",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "February",

pages = "32.7.1--32.7.4",

booktitle = "2014 IEEE International Electron Devices Meeting, IEDM 2014",

address = "United States",

edition = "February",

}

Lee, YJ, Cho, TC, Kao, KH, Sung, PJ, Hsueh, FK, Huang, PC, Wu, CT, Hsu, SH, Huang, WH, Chen, HC, Li, Y, Current, MI, Hengstebeck, B, Marino, J, Büyüklimanli, T, Shieh, JM, Chao, TS, Wu, WF & Yeh, WK 2015, A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing. in 2014 IEEE International Electron Devices Meeting, IEDM 2014. February edn, 7047158, Technical Digest - International Electron Devices Meeting, IEDM, no. February, vol. 2015-February, Institute of Electrical and Electronics Engineers Inc., pp. 32.7.1-32.7.4, 2014 60th IEEE International Electron Devices Meeting, IEDM 2014, San Francisco, United States, 12/15/14. https://doi.org/10.1109/IEDM.2014.7047158

A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing. / Lee, Y. J.; Cho, T. C.; Kao, K. H. et al.
2014 IEEE International Electron Devices Meeting, IEDM 2014. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. p. 32.7.1-32.7.4 7047158 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing

AU - Lee, Y. J.

AU - Cho, T. C.

AU - Kao, K. H.

AU - Sung, P. J.

AU - Hsueh, F. K.

AU - Huang, P. C.

AU - Wu, C. T.

AU - Hsu, S. H.

AU - Huang, W. H.

AU - Chen, H. C.

AU - Li, Y.

AU - Current, M. I.

AU - Hengstebeck, B.

AU - Marino, J.

AU - Büyüklimanli, T.

AU - Shieh, J. M.

AU - Chao, T. S.

AU - Wu, W. F.

AU - Yeh, W. K.

PY - 2015/2/20

Y1 - 2015/2/20

N2 - For the first time, a novel junctionless (JL) FinFET structure with a shell doping profile (SDP) formed by molecular monolayer doping (MLD) method and microwave annealing (MWA) at low temperature is proposed and studied. Thanks to the ultra thin SDP leading to an easily-depleted channel, the proposed JLFinFET can retain the ideal subthreshold swing (∼ 60 mV/dec) at a high doping level according to simulations. Poly Si based JLFinFETs processed with MLD and MWA exhibit superior subthreshold swing (S.S. ∼ 67mV/dec) and excellent on-off ratio (>106) for both n and p channel devices. Threshold voltage (VTH) variation due to random dopant fluctuation (RDF) is reduced in MLD-JLFinFETs, which can be attributed to the molecule self-limiting property of MLD on the Si surface and quasi-diffusionless MWA at low temperature. Our results reveal the potential of the proposed SDP enabling a JLFET showing reduced variation and outstanding performance for low power applications.

AB - For the first time, a novel junctionless (JL) FinFET structure with a shell doping profile (SDP) formed by molecular monolayer doping (MLD) method and microwave annealing (MWA) at low temperature is proposed and studied. Thanks to the ultra thin SDP leading to an easily-depleted channel, the proposed JLFinFET can retain the ideal subthreshold swing (∼ 60 mV/dec) at a high doping level according to simulations. Poly Si based JLFinFETs processed with MLD and MWA exhibit superior subthreshold swing (S.S. ∼ 67mV/dec) and excellent on-off ratio (>106) for both n and p channel devices. Threshold voltage (VTH) variation due to random dopant fluctuation (RDF) is reduced in MLD-JLFinFETs, which can be attributed to the molecule self-limiting property of MLD on the Si surface and quasi-diffusionless MWA at low temperature. Our results reveal the potential of the proposed SDP enabling a JLFET showing reduced variation and outstanding performance for low power applications.

UR - http://www.scopus.com/inward/record.url?scp=84938268443&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84938268443&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2014.7047158

DO - 10.1109/IEDM.2014.7047158

M3 - Conference contribution

AN - SCOPUS:84938268443

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 32.7.1-32.7.4

BT - 2014 IEEE International Electron Devices Meeting, IEDM 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 60th IEEE International Electron Devices Meeting, IEDM 2014

Y2 - 15 December 2014 through 17 December 2014

ER -

Lee YJ, Cho TC, Kao KH, Sung PJ, Hsueh FK, Huang PC et al. A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing. In 2014 IEEE International Electron Devices Meeting, IEDM 2014. February ed. Institute of Electrical and Electronics Engineers Inc. 2015. p. 32.7.1-32.7.4. 7047158. (Technical Digest - International Electron Devices Meeting, IEDM; February). doi: 10.1109/IEDM.2014.7047158

A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing

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