A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing

Y. J. Lee, T. C. Cho, K. H. Kao, P. J. Sung, F. K. Hsueh, P. C. Huang, C. T. Wu, S. H. Hsu, W. H. Huang, H. C. Chen, Y. Li, M. I. Current, B. Hengstebeck, J. Marino, T. Büyüklimanli, J. M. Shieh, T. S. Chao, W. F. Wu, W. K. Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

28 Scopus citations

Abstract

For the first time, a novel junctionless (JL) FinFET structure with a shell doping profile (SDP) formed by molecular monolayer doping (MLD) method and microwave annealing (MWA) at low temperature is proposed and studied. Thanks to the ultra thin SDP leading to an easily-depleted channel, the proposed JLFinFET can retain the ideal subthreshold swing (∼ 60 mV/dec) at a high doping level according to simulations. Poly Si based JLFinFETs processed with MLD and MWA exhibit superior subthreshold swing (S.S. ∼ 67mV/dec) and excellent on-off ratio (>106) for both n and p channel devices. Threshold voltage (VTH) variation due to random dopant fluctuation (RDF) is reduced in MLD-JLFinFETs, which can be attributed to the molecule self-limiting property of MLD on the Si surface and quasi-diffusionless MWA at low temperature. Our results reveal the potential of the proposed SDP enabling a JLFET showing reduced variation and outstanding performance for low power applications.

Original languageEnglish (US)
Title of host publication2014 IEEE International Electron Devices Meeting, IEDM 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages32.7.1-32.7.4
EditionFebruary
ISBN (Electronic)9781479980017
DOIs
StatePublished - Feb 20 2015
Event2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
Duration: Dec 15 2014Dec 17 2014

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
NumberFebruary
Volume2015-February
ISSN (Print)0163-1918

Other

Other2014 60th IEEE International Electron Devices Meeting, IEDM 2014
Country/TerritoryUnited States
CitySan Francisco
Period12/15/1412/17/14

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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