A partially depleted absorber photodiode with graded doping injection regions

Xiaowei Li, Ning Li, Stephen Demiguel, Xiaoguang Zheng, Joe C. Campbell, H. Hoe Tan, Chennupati Jagadish

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Abstract

A partially depleted absorber photodiode with graded absorption injection regions is reported. The 880-nm-thick In0.53Ga0.47As absorption region consists of a depletion layer and graded n- and p-type undepleted injection regions. Under backside illumination at 1.55-μm wavelength, an 8-μm-diameter photodiode exhibited an increase in bandwidth with increasing photocurrent. A saturation current bandwidth product of 990 mA · GHz and a responsivity of 0.67 A/W were achieved.

Original languageEnglish (US)
Pages (from-to)2326-2328
Number of pages3
JournalIEEE Photonics Technology Letters
Volume16
Issue number10
DOIs
StatePublished - Oct 2004

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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