A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices

Sukwon Choi, Samuel Graham, Srabanti Chowdhury, Eric R. Heller, Marko J. Tadjer, Gilberto Moreno, Sreekant Narumanchi

Research output: Contribution to journalReview articlepeer-review

31 Scopus citations

Abstract

Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor devices are under way to realize next-generation power conversion and wireless communication systems. Devices based on aluminum gallium nitride (AlxGa1−xN, x is the Al composition), β-phase gallium oxide (β-Ga2O3), and diamond give promise to the development of power switching devices and radio frequency power amplifiers with higher performance and efficiency than commercial wide bandgap semiconductor devices based on gallium nitride (GaN) and silicon carbide (SiC). However, one of the most critical challenges for the successful deployment of UWBG device technologies is to overcome adverse thermal effects that impact the device performance and reliability. Overheating of UWBG devices originates from the projected high power density operation and poor intrinsic thermal properties of AlxGa1−xN and β-Ga2O3. This Perspective delineates the need and process for the “electro-thermal co-design” of laterally configured UWBG electronic devices and provides a comprehensive review of current state-of-the-art thermal characterization methods, device thermal modeling practices, and both device- and package-level thermal management solutions.

Original languageEnglish (US)
Article number170501
JournalApplied Physics Letters
Volume119
Issue number17
DOIs
StatePublished - Oct 25 2021

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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