A predictive approach to CVD of crystalline layers of TMDs: The case of MoS2

V. Kranthi Kumar, Sukanya Dhar, Tanushree H. Choudhury, S. A. Shivashankar, Srinivasan Raghavan

Research output: Contribution to journalArticlepeer-review

122 Scopus citations


Layered transition metal dichalcogenides (TMDs), such as MoS2, are candidate materials for next generation 2-D electronic and optoelectronic devices. The ability to grow uniform, crystalline, atomic layers over large areas is the key to developing such technology. We report a chemical vapor deposition (CVD) technique which yields n-layered MoS2 on a variety of substrates. A generic approach suitable to all TMDs, involving thermodynamic modeling to identify the appropriate CVD process window, and quantitative control of the vapor phase supersaturation, is demonstrated. All reactant sources in our method are outside the growth chamber, a significant improvement over vapor-based methods for atomic layers reported to date. The as-deposited layers are p-type, due to Mo deficiency, with field effect and Hall hole mobilities of up to 2.4 cm2 V-1 s-1 and 44 cm2 V-1 s-1 respectively. These are among the best reported yet for CVD MoS2.

Original languageEnglish (US)
Pages (from-to)7802-7810
Number of pages9
Issue number17
StatePublished - May 7 2015

All Science Journal Classification (ASJC) codes

  • General Materials Science


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