A programmable ferroelectric single electron transistor

Lu Liu, Vijay Narayanan, Suman Datta

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


We experimentally demonstrate a programmable ferroelectric single electron transistor using direct monolithic integration of a multi-gate III-V (In 0.7Ga0.3As) quantum well field effect transistor with a composite ferroelectric (lead zirconium titanate) and high-k (hafnium dioxide) gate stack. A split gate electrode configuration allows electrical tuning of the tunnel barrier profile and reconfigurable programming of the device to operate in both classical and Coulomb blockade mode. The ferroelectric gate stack under the split gate electrode further allows non-volatile operation in both modes. This demonstration is a significant step towards realization of a non-volatile, programmable binary decision diagram logic circuit for ultra low power operation.

Original languageEnglish (US)
Article number053505
JournalApplied Physics Letters
Issue number5
StatePublished - Feb 4 2013

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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