A quantitative model for ELDRS and H 2 degradation effects in irradiated oxides based on first principles calculations

Nicole L. Rowsey; Mark E. Law; Ronald D. Schrimpf; Daniel M. Fleetwood; Blair R. Tuttle; Sokrates T. Pantelides

doi:10.1109/TNS.2011.2169458

A quantitative model for ELDRS and H ₂ degradation effects in irradiated oxides based on first principles calculations

Nicole L. Rowsey
, Mark E. Law
, Ronald D. Schrimpf
, Daniel M. Fleetwood
, Blair R. Tuttle
, Sokrates T. Pantelides

School of Science (Behrend)

Research output: Contribution to journal › Article › peer-review

75 Scopus citations

Abstract

A physics-based TCAD model for enhanced low-dose-rate sensitivity in linear bipolar devices is developed. Quantitative agreement is found with measured data over a wide range of dose rates and H ₂ concentrations. Analysis of the degradation effects of individual defect types, the implementation of which has been informed by first principles calculations, provides insights into the mechanisms behind enhanced low-dose-rate effects in different hydrogen environments. The effects of initial defect concentration and location and the energetics of the defect-related reactions are explored. Conclusions are drawn about the roles of molecular hydrogen and hydrogenated defects in the radiation response of these devices.

Original language	English (US)
Article number	6060936
Pages (from-to)	2937-2944
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	58
Issue number	6 PART 1
DOIs	https://doi.org/10.1109/TNS.2011.2169458
State	Published - Dec 2011

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2011.2169458

Cite this

@article{36b4e4dbd2f140149d6dd8a0c44ac247,

title = "A quantitative model for ELDRS and H 2 degradation effects in irradiated oxides based on first principles calculations",

abstract = "A physics-based TCAD model for enhanced low-dose-rate sensitivity in linear bipolar devices is developed. Quantitative agreement is found with measured data over a wide range of dose rates and H 2 concentrations. Analysis of the degradation effects of individual defect types, the implementation of which has been informed by first principles calculations, provides insights into the mechanisms behind enhanced low-dose-rate effects in different hydrogen environments. The effects of initial defect concentration and location and the energetics of the defect-related reactions are explored. Conclusions are drawn about the roles of molecular hydrogen and hydrogenated defects in the radiation response of these devices.",

author = "Rowsey, \{Nicole L.\} and Law, \{Mark E.\} and Schrimpf, \{Ronald D.\} and Fleetwood, \{Daniel M.\} and Tuttle, \{Blair R.\} and Pantelides, \{Sokrates T.\}",

note = "Funding Information: Manuscript received July 22, 2011; revised September 13, 2011; accepted September 15, 2011. Date of publication October 25, 2011; date of current version December 14, 2011. This work was supported in part by the Air Force Office of Scientific Research.",

year = "2011",

month = dec,

doi = "10.1109/TNS.2011.2169458",

language = "English (US)",

volume = "58",

pages = "2937--2944",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6 PART 1",

}

TY - JOUR

T1 - A quantitative model for ELDRS and H 2 degradation effects in irradiated oxides based on first principles calculations

AU - Rowsey, Nicole L.

AU - Law, Mark E.

AU - Schrimpf, Ronald D.

AU - Fleetwood, Daniel M.

AU - Tuttle, Blair R.

AU - Pantelides, Sokrates T.

N1 - Funding Information: Manuscript received July 22, 2011; revised September 13, 2011; accepted September 15, 2011. Date of publication October 25, 2011; date of current version December 14, 2011. This work was supported in part by the Air Force Office of Scientific Research.

PY - 2011/12

Y1 - 2011/12

N2 - A physics-based TCAD model for enhanced low-dose-rate sensitivity in linear bipolar devices is developed. Quantitative agreement is found with measured data over a wide range of dose rates and H 2 concentrations. Analysis of the degradation effects of individual defect types, the implementation of which has been informed by first principles calculations, provides insights into the mechanisms behind enhanced low-dose-rate effects in different hydrogen environments. The effects of initial defect concentration and location and the energetics of the defect-related reactions are explored. Conclusions are drawn about the roles of molecular hydrogen and hydrogenated defects in the radiation response of these devices.

AB - A physics-based TCAD model for enhanced low-dose-rate sensitivity in linear bipolar devices is developed. Quantitative agreement is found with measured data over a wide range of dose rates and H 2 concentrations. Analysis of the degradation effects of individual defect types, the implementation of which has been informed by first principles calculations, provides insights into the mechanisms behind enhanced low-dose-rate effects in different hydrogen environments. The effects of initial defect concentration and location and the energetics of the defect-related reactions are explored. Conclusions are drawn about the roles of molecular hydrogen and hydrogenated defects in the radiation response of these devices.

UR - https://www.scopus.com/pages/publications/83855162224

UR - https://www.scopus.com/pages/publications/83855162224#tab=citedBy

U2 - 10.1109/TNS.2011.2169458

DO - 10.1109/TNS.2011.2169458

M3 - Article

AN - SCOPUS:83855162224

SN - 0018-9499

VL - 58

SP - 2937

EP - 2944

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6 PART 1

M1 - 6060936

ER -

A quantitative model for ELDRS and H ₂ degradation effects in irradiated oxides based on first principles calculations

Abstract

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