Abstract
This paper presents ferroelectric single-electron transistors (SETs) with tunable tunnel barriers and their application in a reconfigurable binary decision diagram (BDD) logic architecture. In this experimental demonstration, the SETs can be programmed into short, open, and Coulomb blockade modes to construct the BDD fabric. We experimentally demonstrate the decision node, consisting of two SETs, with robust path switching characteristics. Harnessing such programmability and path switching features, a nonvolatile reconfigurable low-power BDD logic is achieved. A ferroelectric dielectric-based split gate configuration and a differential biasing scheme are utilized to share the programming resources and reduce the energy consumption. Peripheral interface circuits are designed to recover the output signal swing for cascaded BDD logic demonstration and to provide noise immunity. The simulation shows that with sufficient circuitry complexity or a latched dynamic CMOS interface, the proposed BDD architecture achieves higher power efficiency than CMOS at the same throughput delay.
Original language | English (US) |
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Article number | 7035087 |
Pages (from-to) | 1052-1057 |
Number of pages | 6 |
Journal | IEEE Transactions on Electron Devices |
Volume | 62 |
Issue number | 3 |
DOIs | |
State | Published - Mar 2015 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering