A reduced complexity process for organic thin film transistors

Hagen Klauk, David J. Gundlach, Mathias Bonse, Chung Chen Kuo, Thomas N. Jackson

Research output: Contribution to journalArticlepeer-review

80 Scopus citations


A simplified device structure for depletion-mode organic thin film transistors is described in which the gate electrode and the source/drain contacts are prepared in the same process step, thus reducing the number of material depositions and photolithography steps. Based on the simplified device structure and using the small-molecule aromatic hydrocarbon pentacene as the active material, organic thin film transistors were fabricated on glass substrates with carrier mobility of 0.6 cm2/V s, on/off current ratio of 105, and subthreshold slope of 0.5 V/decade.

Original languageEnglish (US)
Pages (from-to)1692-1694
Number of pages3
JournalApplied Physics Letters
Issue number13
StatePublished - Mar 27 2000

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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