Abstract
A simplified device structure for depletion-mode organic thin film transistors is described in which the gate electrode and the source/drain contacts are prepared in the same process step, thus reducing the number of material depositions and photolithography steps. Based on the simplified device structure and using the small-molecule aromatic hydrocarbon pentacene as the active material, organic thin film transistors were fabricated on glass substrates with carrier mobility of 0.6 cm2/V s, on/off current ratio of 105, and subthreshold slope of 0.5 V/decade.
Original language | English (US) |
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Pages (from-to) | 1692-1694 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 76 |
Issue number | 13 |
DOIs | |
State | Published - Mar 27 2000 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)