A rigorous model for through-silicon vias with ohmic contact in silicon interposer

High-density through-silicon via (TSV) interconnects in silicon interposer require effective crosstalk-reduction signaling schemes and rigorous crosstalk modeling techniques. In this letter, we propose a rigorous model for grounded TSVs with ohmic contact. The proposed model takes into account contact resistance, doping density, and doping-region capacitance for the metal-silicon interface of grounded TSVs. The comparison between modeling results and full-wave simulations validates the accuracy of the proposed model for signal-ground-signal vias.