A scanning tunneling microscopy study of dysprosium silicide nanowire growth on Si(001)

B. Z. Liu; J. Nogami

doi:10.1063/1.1516621

A scanning tunneling microscopy study of dysprosium silicide nanowire growth on Si(001)

B. Z. Liu, J. Nogami

Nanofabrication Laboratory

Research output: Contribution to journal › Article › peer-review

83 Scopus citations

Abstract

The epitaxial growth of dysprosium silicide on silicon substrates was studied. Scanning tunneling microscopy (STM) was used for the study. The density and width of nanowires were found to be metal coverage dependent. The growth rate was seen to increase with greater coverage and with increase in annealing time.

Original language	English (US)
Pages (from-to)	593-599
Number of pages	7
Journal	Journal of Applied Physics
Volume	93
Issue number	1
DOIs	https://doi.org/10.1063/1.1516621
State	Published - Jan 1 2003

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.1516621

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abstract = "The epitaxial growth of dysprosium silicide on silicon substrates was studied. Scanning tunneling microscopy (STM) was used for the study. The density and width of nanowires were found to be metal coverage dependent. The growth rate was seen to increase with greater coverage and with increase in annealing time.",

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AB - The epitaxial growth of dysprosium silicide on silicon substrates was studied. Scanning tunneling microscopy (STM) was used for the study. The density and width of nanowires were found to be metal coverage dependent. The growth rate was seen to increase with greater coverage and with increase in annealing time.

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A scanning tunneling microscopy study of dysprosium silicide nanowire growth on Si(001)

Abstract

All Science Journal Classification (ASJC) codes

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