A self-testable SiGe LNA and built-in-self-test methodology for multiple performance specifications of RF amplifiers

Abhilash Goyal; Madhavan Swaminathan; Abhijit Chatterjee; Duane Howard; John D. Cressler

doi:10.1109/ISQED.2012.6187467

A self-testable SiGe LNA and built-in-self-test methodology for multiple performance specifications of RF amplifiers

Abhilash Goyal, Madhavan Swaminathan, Abhijit Chatterjee, Duane Howard, John D. Cressler

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

In this paper, a self-testable SiGe low noise amplifier (LNA) is designed and a Built-in-Self-Test (BIST) methodology is proposed for amplifiers embedded in RF systems. In this BIST methodology, the RF amplifier has the capability to simultaneously test multiple performance specifications on-chip, including Gain and PldB. The self-testable LNA can be placed in a testing mode, in which it self generates a signature of its health using oscillation principles. It eliminates the requirement of any external test stimulus for testing purposes, thus enables the possibility of self-testable RF designs. For the proof of concept, the presented SiGe LNA is designed to operate in the X-band (9.0 GHz) in a commercially-available 6 metal layer, 0.18 μm, 120 GHz SiGe BiCMOS platform. This self-testing design concept can be extended to CMOS amplifiers as well. Furthermore, in this paper, the built-in-self-test methodology is demonstrated using board-level as well as chip-level prototypes.

Original language	English (US)
Title of host publication	Proceedings of the 13th International Symposium on Quality Electronic Design, ISQED 2012
Pages	7-12
Number of pages	6
DOIs	https://doi.org/10.1109/ISQED.2012.6187467
State	Published - 2012
Event	13th International Symposium on Quality Electronic Design, ISQED 2012 - Santa Clara, CA, United States Duration: Mar 19 2012 → Mar 21 2012

Publication series

Name	Proceedings - International Symposium on Quality Electronic Design, ISQED
ISSN (Print)	1948-3287
ISSN (Electronic)	1948-3295

Conference

Conference	13th International Symposium on Quality Electronic Design, ISQED 2012
Country/Territory	United States
City	Santa Clara, CA
Period	3/19/12 → 3/21/12

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

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10.1109/ISQED.2012.6187467

Cite this

Goyal, A., Swaminathan, M., Chatterjee, A., Howard, D., & Cressler, J. D. (2012). A self-testable SiGe LNA and built-in-self-test methodology for multiple performance specifications of RF amplifiers. In Proceedings of the 13th International Symposium on Quality Electronic Design, ISQED 2012 (pp. 7-12). Article 6187467 (Proceedings - International Symposium on Quality Electronic Design, ISQED). https://doi.org/10.1109/ISQED.2012.6187467

Goyal, Abhilash ; Swaminathan, Madhavan ; Chatterjee, Abhijit et al. / A self-testable SiGe LNA and built-in-self-test methodology for multiple performance specifications of RF amplifiers. Proceedings of the 13th International Symposium on Quality Electronic Design, ISQED 2012. 2012. pp. 7-12 (Proceedings - International Symposium on Quality Electronic Design, ISQED).

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title = "A self-testable SiGe LNA and built-in-self-test methodology for multiple performance specifications of RF amplifiers",

abstract = "In this paper, a self-testable SiGe low noise amplifier (LNA) is designed and a Built-in-Self-Test (BIST) methodology is proposed for amplifiers embedded in RF systems. In this BIST methodology, the RF amplifier has the capability to simultaneously test multiple performance specifications on-chip, including Gain and PldB. The self-testable LNA can be placed in a testing mode, in which it self generates a signature of its health using oscillation principles. It eliminates the requirement of any external test stimulus for testing purposes, thus enables the possibility of self-testable RF designs. For the proof of concept, the presented SiGe LNA is designed to operate in the X-band (9.0 GHz) in a commercially-available 6 metal layer, 0.18 μm, 120 GHz SiGe BiCMOS platform. This self-testing design concept can be extended to CMOS amplifiers as well. Furthermore, in this paper, the built-in-self-test methodology is demonstrated using board-level as well as chip-level prototypes.",

author = "Abhilash Goyal and Madhavan Swaminathan and Abhijit Chatterjee and Duane Howard and Cressler, {John D.}",

year = "2012",

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language = "English (US)",

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pages = "7--12",

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Goyal, A, Swaminathan, M, Chatterjee, A, Howard, D & Cressler, JD 2012, A self-testable SiGe LNA and built-in-self-test methodology for multiple performance specifications of RF amplifiers. in Proceedings of the 13th International Symposium on Quality Electronic Design, ISQED 2012., 6187467, Proceedings - International Symposium on Quality Electronic Design, ISQED, pp. 7-12, 13th International Symposium on Quality Electronic Design, ISQED 2012, Santa Clara, CA, United States, 3/19/12. https://doi.org/10.1109/ISQED.2012.6187467

A self-testable SiGe LNA and built-in-self-test methodology for multiple performance specifications of RF amplifiers. / Goyal, Abhilash; Swaminathan, Madhavan; Chatterjee, Abhijit et al.
Proceedings of the 13th International Symposium on Quality Electronic Design, ISQED 2012. 2012. p. 7-12 6187467 (Proceedings - International Symposium on Quality Electronic Design, ISQED).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Howard, Duane

AU - Cressler, John D.

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AB - In this paper, a self-testable SiGe low noise amplifier (LNA) is designed and a Built-in-Self-Test (BIST) methodology is proposed for amplifiers embedded in RF systems. In this BIST methodology, the RF amplifier has the capability to simultaneously test multiple performance specifications on-chip, including Gain and PldB. The self-testable LNA can be placed in a testing mode, in which it self generates a signature of its health using oscillation principles. It eliminates the requirement of any external test stimulus for testing purposes, thus enables the possibility of self-testable RF designs. For the proof of concept, the presented SiGe LNA is designed to operate in the X-band (9.0 GHz) in a commercially-available 6 metal layer, 0.18 μm, 120 GHz SiGe BiCMOS platform. This self-testing design concept can be extended to CMOS amplifiers as well. Furthermore, in this paper, the built-in-self-test methodology is demonstrated using board-level as well as chip-level prototypes.

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Goyal A, Swaminathan M, Chatterjee A, Howard D, Cressler JD. A self-testable SiGe LNA and built-in-self-test methodology for multiple performance specifications of RF amplifiers. In Proceedings of the 13th International Symposium on Quality Electronic Design, ISQED 2012. 2012. p. 7-12. 6187467. (Proceedings - International Symposium on Quality Electronic Design, ISQED). doi: 10.1109/ISQED.2012.6187467

A self-testable SiGe LNA and built-in-self-test methodology for multiple performance specifications of RF amplifiers

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