TY - GEN
T1 - A-Si:H TFT phosphorescent OLED active matrix pixels fabricated on polymeric substrates
AU - Nichols, J. A.
AU - Jackson, Thomas Nelson
AU - Lu, M. H.
AU - Hack, M.
PY - 2004
Y1 - 2004
N2 - A-Si:H thin film transistors (TFT) phosphorescent organic light emitting diode (OLED) active matrix pixels and pixel array were fabricated on 50μm thick polyimide substrates. 4-inch polymeric substrates were laminated to glass plates using a removal pressure-sensitive silicone gel adhesive to improve thermal coupling, maintain a flat surface, and provide rigid support during processing. A inverted staggered tri-layer a-Si:H process with a maximum process temperature of 250 °C and conservative 15 μm layout rules was used for pixel fabrication. The results show that the backplane fabricated on polyimide and an optical microscope image is complete of a portion of an array before OLED.
AB - A-Si:H thin film transistors (TFT) phosphorescent organic light emitting diode (OLED) active matrix pixels and pixel array were fabricated on 50μm thick polyimide substrates. 4-inch polymeric substrates were laminated to glass plates using a removal pressure-sensitive silicone gel adhesive to improve thermal coupling, maintain a flat surface, and provide rigid support during processing. A inverted staggered tri-layer a-Si:H process with a maximum process temperature of 250 °C and conservative 15 μm layout rules was used for pixel fabrication. The results show that the backplane fabricated on polyimide and an optical microscope image is complete of a portion of an array before OLED.
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U2 - 10.1109/DRC.2004.1367782
DO - 10.1109/DRC.2004.1367782
M3 - Conference contribution
AN - SCOPUS:18044380892
SN - 0780382846
T3 - Device Research Conference - Conference Digest, DRC
SP - 59
EP - 60
BT - Device Research Conference - Conference Digest, 62nd DRC
T2 - Device Research Conference - Conference Digest, 62nd DRC
Y2 - 21 June 2004 through 23 June 2004
ER -