Abstract
By considering the domain wall scattering in ferromagnetic striped-domain structure, we present a simple bilayered magnetoelectric random access memory cell with a ferromagnetic thin film grown on a ferroelectric layer. The calculations show that the striped-domain structure in the ferromagnetic film can change into a single-domain structure upon applying an electric field to the ferroelectric layer. As a result, the presence (absence) of the domain walls in response to the striped-domain (single-domain) state can cause an abrupt change in the film resistivity, which could be employed for memory applications accordingly.
Original language | English (US) |
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Article number | 043909 |
Journal | Journal of Applied Physics |
Volume | 108 |
Issue number | 4 |
DOIs | |
State | Published - Aug 15 2010 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy