Abstract
In this study, we report a simple optical reflectance method to characterize the Al mole fraction in bulk AlGaN and AlGaN/GaN heterostructures. This method is based on the concept of Fabry-Perot oscillations of a probing beam when the photon energy of the beam falls below the band-gap energy of the semiconductor. The accuracy and merits of this method in comparison with the more elaborate photoluminescence method are discussed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1419-1421 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 75 |
| Issue number | 10 |
| DOIs | |
| State | Published - Sep 6 1999 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)