TY - JOUR
T1 - A small signal amplifier based on ionic liquid gated black phosphorous field effect transistor
AU - Das, Saptarshi
AU - Zhang, Wei
AU - Thoutam, Laxman Raju
AU - Xiao, Zhili
AU - Hoffmann, Axel
AU - Demarteau, Marcel
AU - Roelofs, Andreas
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/6/1
Y1 - 2015/6/1
N2 - In this letter, we report an analog small signal amplifier based on semiconducting black phosphorus (BP), the most recent addition to the family of 2D crystals. The amplifier, consisting of a BP load resistor and a BP field-effect transistor (FET), was integrated on a single flake. The gain of the amplifier was found to be ∼ 9 and it remained undistorted for input signal frequencies up to 15 kHz. In addition, we also report record high on current of 200 μA/μm at VDD =-0.5 V in the BP FETs. Our results demonstrate the possibility for the implementation of BP in the future generations of analog devices.
AB - In this letter, we report an analog small signal amplifier based on semiconducting black phosphorus (BP), the most recent addition to the family of 2D crystals. The amplifier, consisting of a BP load resistor and a BP field-effect transistor (FET), was integrated on a single flake. The gain of the amplifier was found to be ∼ 9 and it remained undistorted for input signal frequencies up to 15 kHz. In addition, we also report record high on current of 200 μA/μm at VDD =-0.5 V in the BP FETs. Our results demonstrate the possibility for the implementation of BP in the future generations of analog devices.
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U2 - 10.1109/LED.2015.2421948
DO - 10.1109/LED.2015.2421948
M3 - Article
AN - SCOPUS:84930507287
SN - 0741-3106
VL - 36
SP - 621
EP - 623
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 6
M1 - 7084130
ER -