A spin dependent recombination study of radiation induced defects at and near the si/sio2 interface

Engineering & Materials Science

• Paramagnetic resonance 100%
• Integrated circuits 67%
• Radiation 58%
• Defects 50%
• Capacitors 38%
• Radiation damage 36%
• MOS devices 34%
• MOSFET devices 28%
• Transistors 20%
• Signal to noise ratio 20%
• Silicon 19%

Physics & Astronomy

• integrated circuits 69%
• electron paramagnetic resonance 67%
• capacitors 42%
• defects 40%
• radiation 40%
• transistors 39%
• radiation damage 25%
• low concentrations 23%
• signal to noise ratios 20%
• field effect transistors 19%
• silicon 13%