A spin-dependent recombination study of radiation-induced Pb1 centers at the (001) Si/SiO2 interface

Tetsuya D. Mishima, Patrick M. Lenahan

Research output: Contribution to journalConference articlepeer-review

31 Scopus citations


The generation of interface defects at the Si/SiO2 boundary is an important aspect of radiation damage in MOS devices. The observations of several independent groups over the last twenty years have demonstrated that Si/SiO2 interface silicon "dangling bond" defects called Pb centers dominate the interface trap generation process. In the technologically important (001) Si/SiO2 system, two Pb variants may appear. One variant, the Pb0 center, generally dominates radiation and hot carrier damage; however, a less well studied variant, called Pb1, may play a significant secondary role. The electronic properties of the Pb1 centers are quite controversial. Early work by Gerardi et al. indicated quite strongly that the Pb1 centers, like the other Pb family members, have two levels in the Si bandgap. Several recent publications by Stesmans and Afanas'ev argue that Pb1 centers do not have any levels in the Si bandgap. We present spin-dependent recombination (SDR) measurements which demonstrate that Pb1 centers have levels around the middle of the Si bandgap. Our SDR results strongly suggest that the Pb1 center electron correlation energy is significantly smaller than that of Pb0. Our results may help explain some apparently contradictory studies involving the energy distribution of radiation induced interface states. We also discuss possible relevance of these results to the precision of oxide charge measurements based on the shifts in capacitance versus voltage curves for the Fermi energy at midgap.

Original languageEnglish (US)
Pages (from-to)2249-2255
Number of pages7
JournalIEEE Transactions on Nuclear Science
Issue number6 III
StatePublished - Dec 2000
Event2000 IEEE Nuclear and Space Radiation Effects Conference (NSREC) - Reno, NV, United States
Duration: Jul 24 2000Jul 28 2000

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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