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A strain-driven morphotropic phase boundary in bifeO3

  • R. J. Zeches
  • , M. D. Rossell
  • , J. X. Zhang
  • , A. J. Hatt
  • , Q. He
  • , C. H. Yang
  • , A. Kumar
  • , C. H. Wang
  • , A. Melville
  • , C. Adamo
  • , G. Sheng
  • , Y. H. Chu
  • , J. F. Ihlefeld
  • , R. Erni
  • , C. Ederer
  • , V. Gopalan
  • , L. Q. Chen
  • , D. G. Schldin
  • , N. A. Spaldin
  • , L. W. Martin
  • R. Ramesh

Research output: Contribution to journalArticlepeer-review

Abstract

Piezoelectric materials, which convert mechanical to electrical energy and vice versa, are typically characterized by the intimate coexistence of two phases across a morphotropic phase boundary. Electrically switching one to the other yields large electromechanical coupling coefficients. Driven by global environmental concerns, there is currently a strong push to discover practical lead-free piezoelectrics for device engineering. Using a combination of epitaxial growth techniques in conjunction with theoretical approaches, we show the formation of a morphotropic phase boundary through epitaxial constraint in lead-free piezoelectric bismuth ferrite (BiFeO3) films. Electric field-dependent studies show that a tetragonal-like phase can be reversibly converted into a rhombohedral-like phase, accompanied by measurable displacements of the surface, making this new lead-free system of interest for probe-based data storage and actuator applications.

Original languageEnglish (US)
Pages (from-to)977-980
Number of pages4
JournalScience
Volume326
Issue number5955
DOIs
StatePublished - Nov 13 2009

All Science Journal Classification (ASJC) codes

  • General

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