A study of charge trapping in pecvd pteos films

Patrick M. Lenahan, Curtis A. Billman, Robert Fuller, Howard Evans, William H. Speece, David Decrosta, Robert Lowry

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


We have studied charge trapping in tetraethylorthosilicate (TEOS) based phosphorous doped silicon glass (PSG) films deposited by plasma enhanced chemical vapor deposition (PECVD) using electron spin resonance and capacitance voltage measurements. The results indicate that these films trap electrons and holes very well. The charges appear to be trapped in phosphorus and carbon related centers as well as in E' centers. The carbon related centers are unique to the TEOS films.

Original languageEnglish (US)
Pages (from-to)1834-1839
Number of pages6
JournalIEEE Transactions on Nuclear Science
Issue number6 PART 1
StatePublished - 1997

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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