A study of charge trapping in pecvd pteos films

Patrick M. Lenahan; Curtis A. Billman; Robert Fuller; Howard Evans; William H. Speece; David Decrosta; Robert Lowry

doi:10.1109/23.658950

A study of charge trapping in pecvd pteos films

Patrick M. Lenahan, Curtis A. Billman, Robert Fuller, Howard Evans, William H. Speece, David Decrosta, Robert Lowry

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We have studied charge trapping in tetraethylorthosilicate (TEOS) based phosphorous doped silicon glass (PSG) films deposited by plasma enhanced chemical vapor deposition (PECVD) using electron spin resonance and capacitance voltage measurements. The results indicate that these films trap electrons and holes very well. The charges appear to be trapped in phosphorus and carbon related centers as well as in E' centers. The carbon related centers are unique to the TEOS films.

Original language	English (US)
Pages (from-to)	1834-1839
Number of pages	6
Journal	IEEE Transactions on Nuclear Science
Volume	44
Issue number	6 PART 1
DOIs	https://doi.org/10.1109/23.658950
State	Published - 1997

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/23.658950

Cite this

@article{da42278edec74ad695cea7ab599519b4,

title = "A study of charge trapping in pecvd pteos films",

abstract = "We have studied charge trapping in tetraethylorthosilicate (TEOS) based phosphorous doped silicon glass (PSG) films deposited by plasma enhanced chemical vapor deposition (PECVD) using electron spin resonance and capacitance voltage measurements. The results indicate that these films trap electrons and holes very well. The charges appear to be trapped in phosphorus and carbon related centers as well as in E' centers. The carbon related centers are unique to the TEOS films.",

author = "Lenahan, {Patrick M.} and Billman, {Curtis A.} and Robert Fuller and Howard Evans and Speece, {William H.} and David Decrosta and Robert Lowry",

year = "1997",

doi = "10.1109/23.658950",

language = "English (US)",

volume = "44",

pages = "1834--1839",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6 PART 1",

}

TY - JOUR

T1 - A study of charge trapping in pecvd pteos films

AU - Lenahan, Patrick M.

AU - Billman, Curtis A.

AU - Fuller, Robert

AU - Evans, Howard

AU - Speece, William H.

AU - Decrosta, David

AU - Lowry, Robert

PY - 1997

Y1 - 1997

N2 - We have studied charge trapping in tetraethylorthosilicate (TEOS) based phosphorous doped silicon glass (PSG) films deposited by plasma enhanced chemical vapor deposition (PECVD) using electron spin resonance and capacitance voltage measurements. The results indicate that these films trap electrons and holes very well. The charges appear to be trapped in phosphorus and carbon related centers as well as in E' centers. The carbon related centers are unique to the TEOS films.

AB - We have studied charge trapping in tetraethylorthosilicate (TEOS) based phosphorous doped silicon glass (PSG) films deposited by plasma enhanced chemical vapor deposition (PECVD) using electron spin resonance and capacitance voltage measurements. The results indicate that these films trap electrons and holes very well. The charges appear to be trapped in phosphorus and carbon related centers as well as in E' centers. The carbon related centers are unique to the TEOS films.

UR - http://www.scopus.com/inward/record.url?scp=0031354376&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031354376&partnerID=8YFLogxK

U2 - 10.1109/23.658950

DO - 10.1109/23.658950

M3 - Article

AN - SCOPUS:0031354376

SN - 0018-9499

VL - 44

SP - 1834

EP - 1839

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6 PART 1

ER -

A study of charge trapping in pecvd pteos films

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this