A study of iron-related centers in heavily boron-doped silicon by deep-level transient spectroscopy

O. O. Awadelkarim, B. Monemar

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Deep levels in iron-diffused heavily boron-doped silicon are investigated by means of deep-level transient spectroscopy (DLTS). For interstitial iron Fei a donor state is observed at 0.39 eV above the top of the valence band Ev. It is proposed that Fei exhibits charge-dependent annealing characteristics, and in its neutral charge state Fei is mobile at temperatures as low as ≊280-230 K. Three other Fe-related donor states are observed at Ev+0.53 eV, E v+0.60 eV, and ≊Ev+0.63 eV. The latter two states, not reported in any previous DLTS study, are produced in comparable concentrations to that of Fei upon annealing at 100 °C, whereas the former state present directly after quenching is suggested to result from a complex defect containing Fei. It is also argued that the level observed in this study at Ev+0.60 eV is the same as the one reported earlier at 0.55 eV below the bottom of the conduction band, but that it corresponds to a donor state of an Fe-related defect, in contrast to previous suggestions of it being an acceptor state. The annealing behavior of the defect states observed is studied up to 300 °C, and possible interactions involving Fei are discussed.

Original languageEnglish (US)
Pages (from-to)6306-6310
Number of pages5
JournalJournal of Applied Physics
Issue number11
StatePublished - 1988

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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