A study of low-bias photocurrent gradient of avalanche photodiodes

Shuling Wang; Rubin Sidhu; Gauri Karve; Feng Ma; Xiaowei Li; Xiao Guang Zheng; Jeffrey Byron Hurst; Xiaguang Sun; Ning Li; Archie L. Holmes; Joe C. Campbell

doi:10.1109/TED.2002.805233

A study of low-bias photocurrent gradient of avalanche photodiodes

Shuling Wang
, Rubin Sidhu
, Gauri Karve
, Feng Ma
, Xiaowei Li
, Xiao Guang Zheng
, Jeffrey Byron Hurst
, Xiaguang Sun
, Ning Li
, Archie L. Holmes
, Joe C. Campbell

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We present a study of the photo-response of avalanche photodiodes (APDs) under low reverse bias at unity gain. Some wafers exhibit a linear increase of photocurrent as a function of bias voltage; the "slope" of this linear current-voltage (I-V) curve has been examined under different illumination conditions, fabrication procedures and growth conditions. The observed characteristics are explained in terms of the extension of the depletion region edge toward the surface. An analytical model, based on minority drift-diffusion and current continuity equations, provides good fits to the experimental results for small (∼ 0.1 μm) "effective diffusion lengths".

Original language	English (US)
Pages (from-to)	2107-2113
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	49
Issue number	12
DOIs	https://doi.org/10.1109/TED.2002.805233
State	Published - Dec 2002

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2002.805233

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title = "A study of low-bias photocurrent gradient of avalanche photodiodes",

abstract = "We present a study of the photo-response of avalanche photodiodes (APDs) under low reverse bias at unity gain. Some wafers exhibit a linear increase of photocurrent as a function of bias voltage; the {"}slope{"} of this linear current-voltage (I-V) curve has been examined under different illumination conditions, fabrication procedures and growth conditions. The observed characteristics are explained in terms of the extension of the depletion region edge toward the surface. An analytical model, based on minority drift-diffusion and current continuity equations, provides good fits to the experimental results for small (∼ 0.1 μm) {"}effective diffusion lengths{"}.",

author = "Shuling Wang and Rubin Sidhu and Gauri Karve and Feng Ma and Xiaowei Li and Zheng, \{Xiao Guang\} and Hurst, \{Jeffrey Byron\} and Xiaguang Sun and Ning Li and Holmes, \{Archie L.\} and Campbell, \{Joe C.\}",

year = "2002",

month = dec,

doi = "10.1109/TED.2002.805233",

language = "English (US)",

volume = "49",

pages = "2107--2113",

journal = "IEEE Transactions on Electron Devices",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - A study of low-bias photocurrent gradient of avalanche photodiodes

AU - Wang, Shuling

AU - Sidhu, Rubin

AU - Karve, Gauri

AU - Ma, Feng

AU - Li, Xiaowei

AU - Zheng, Xiao Guang

AU - Hurst, Jeffrey Byron

AU - Sun, Xiaguang

AU - Li, Ning

AU - Holmes, Archie L.

AU - Campbell, Joe C.

PY - 2002/12

Y1 - 2002/12

N2 - We present a study of the photo-response of avalanche photodiodes (APDs) under low reverse bias at unity gain. Some wafers exhibit a linear increase of photocurrent as a function of bias voltage; the "slope" of this linear current-voltage (I-V) curve has been examined under different illumination conditions, fabrication procedures and growth conditions. The observed characteristics are explained in terms of the extension of the depletion region edge toward the surface. An analytical model, based on minority drift-diffusion and current continuity equations, provides good fits to the experimental results for small (∼ 0.1 μm) "effective diffusion lengths".

AB - We present a study of the photo-response of avalanche photodiodes (APDs) under low reverse bias at unity gain. Some wafers exhibit a linear increase of photocurrent as a function of bias voltage; the "slope" of this linear current-voltage (I-V) curve has been examined under different illumination conditions, fabrication procedures and growth conditions. The observed characteristics are explained in terms of the extension of the depletion region edge toward the surface. An analytical model, based on minority drift-diffusion and current continuity equations, provides good fits to the experimental results for small (∼ 0.1 μm) "effective diffusion lengths".

UR - https://www.scopus.com/pages/publications/0036999520

UR - https://www.scopus.com/pages/publications/0036999520#tab=citedBy

U2 - 10.1109/TED.2002.805233

DO - 10.1109/TED.2002.805233

M3 - Article

AN - SCOPUS:0036999520

SN - 0018-9383

VL - 49

SP - 2107

EP - 2113

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

ER -

A study of low-bias photocurrent gradient of avalanche photodiodes

Abstract

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