@inproceedings{7ff850c3f1e44beb80d04021d95071f9,
title = "A surprising result: {\textquotedblleft}Bulk{\textquotedblright} SiC defects in the negative bias instability in 4H-SiC MOSFETs",
abstract = "We utilize electrically detected magnetic resonance and {\textquotedblleft}on-the-fly{\textquotedblright} elevated temperature stressing to examine the effects of negative bias temperature stress on defects within the {\textquotedblleft}bulk{\textquotedblright} SiC, that is, below the SiC/SiO2 interface. We observe generation of two temperaturedependent defects; one has a two (or three) line spectrum with lines separated by about 61 (30) Gauss when the SiC/SiO2 interface is perpendicular to the magnetic field and very slightly less, about 59 (30) Gauss when the SiC/SiO2 interface is parallel to the field. The second spectrum has a single line with zero-crossing g = 2.0118 when the magnetic field is nearly perpendicular to the SiC/SiO2 interface; the g-value drops to about 2.0016 with the field parallel to the SiC/SiO2 interface. We also observe strong evidence for hydrogen motion within the {\textquotedblleft}bulk{\textquotedblright} SiC, as both spectra broaden significantly at elevated temperature, with broadening at both high and low fields and frequencies.",
author = "Anders, \{Mark A.\} and Lenahan, \{Patrick M.\} and Lelis, \{Aivars J.\}",
note = "Publisher Copyright: {\textcopyright} 2016 Trans Tech Publications, Switzerland.; 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 ; Conference date: 04-10-2015 Through 09-10-2015",
year = "2016",
doi = "10.4028/www.scientific.net/MSF.858.513",
language = "English (US)",
isbn = "9783035710427",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "513--517",
editor = "Fabrizio Roccaforte and Filippo Giannazzo and \{La Via\}, Francesco and Roberta Nipoti and Danilo Crippa and Mario Saggio",
booktitle = "Silicon Carbide and Related Materials 2015",
}