TY - JOUR
T1 - A Thermal Diode Based on Nanoscale Thermal Radiation
AU - Fiorino, Anthony
AU - Thompson, Dakotah
AU - Zhu, Linxiao
AU - Mittapally, Rohith
AU - Biehs, Svend Age
AU - Bezencenet, Odile
AU - El-Bondry, Nadia
AU - Bansropun, Shailendra
AU - Ben-Abdallah, Philippe
AU - Meyhofer, Edgar
AU - Reddy, Pramod
N1 - Publisher Copyright:
© Copyright 2018 American Chemical Society.
PY - 2018/6/26
Y1 - 2018/6/26
N2 - In this work we demonstrate thermal rectification at the nanoscale between doped Si and VO2 surfaces. Specifically, we show that the metal-insulator transition of VO2 makes it possible to achieve large differences in the heat flow between Si and VO2 when the direction of the temperature gradient is reversed. We further show that this rectification increases at nanoscale separations, with a maximum rectification coefficient exceeding 50% at ∼140 nm gaps and a temperature difference of 70 K. Our modeling indicates that this high rectification coefficient arises due to broadband enhancement of heat transfer between metallic VO2 and doped Si surfaces, as compared to narrower-band exchange that occurs when VO2 is in its insulating state. This work demonstrates the feasibility of accomplishing near-field-based rectification of heat, which is a key component for creating nanoscale radiation-based information processing devices and thermal management approaches.
AB - In this work we demonstrate thermal rectification at the nanoscale between doped Si and VO2 surfaces. Specifically, we show that the metal-insulator transition of VO2 makes it possible to achieve large differences in the heat flow between Si and VO2 when the direction of the temperature gradient is reversed. We further show that this rectification increases at nanoscale separations, with a maximum rectification coefficient exceeding 50% at ∼140 nm gaps and a temperature difference of 70 K. Our modeling indicates that this high rectification coefficient arises due to broadband enhancement of heat transfer between metallic VO2 and doped Si surfaces, as compared to narrower-band exchange that occurs when VO2 is in its insulating state. This work demonstrates the feasibility of accomplishing near-field-based rectification of heat, which is a key component for creating nanoscale radiation-based information processing devices and thermal management approaches.
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U2 - 10.1021/acsnano.8b01645
DO - 10.1021/acsnano.8b01645
M3 - Article
C2 - 29790344
AN - SCOPUS:85049071665
SN - 1936-0851
VL - 12
SP - 5174
EP - 5179
JO - ACS nano
JF - ACS nano
IS - 6
ER -