TY - GEN
T1 - A three-terminal edge-triggered mott switch
AU - Aziz, Ahmedullah
AU - Engel-Herbert, Roman
AU - Gupta, Sumeet Kumar
AU - Shukla, Nikhil
PY - 2018/8/20
Y1 - 2018/8/20
N2 - We demonstrate a novel VO2 based edge-triggered (ET) three-terminal Mott switch that leverages the displacement current induced by the switching of the gate voltage pulse to trigger an IMT in the VO2 channel. The design overcomes a long-standing challenge of realizing a three-terminal VO2 switch due to the absence of field-effect induced IMT in VO2. The ET Mott switch also enables isolation between the input the output (at steady state), and facilitates reduction in the effective trigger voltage in comparison to the two-terminal configuration. We show using simulations that these properties can be exploited to enable a BEOL-compatible 3T selector for MTJ-based cross-point memory, showing 3.4× higher cell TMR, as well as 45% 40% lower sneak-path current power, respectively.
AB - We demonstrate a novel VO2 based edge-triggered (ET) three-terminal Mott switch that leverages the displacement current induced by the switching of the gate voltage pulse to trigger an IMT in the VO2 channel. The design overcomes a long-standing challenge of realizing a three-terminal VO2 switch due to the absence of field-effect induced IMT in VO2. The ET Mott switch also enables isolation between the input the output (at steady state), and facilitates reduction in the effective trigger voltage in comparison to the two-terminal configuration. We show using simulations that these properties can be exploited to enable a BEOL-compatible 3T selector for MTJ-based cross-point memory, showing 3.4× higher cell TMR, as well as 45% 40% lower sneak-path current power, respectively.
UR - http://www.scopus.com/inward/record.url?scp=85053195561&partnerID=8YFLogxK
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U2 - 10.1109/DRC.2018.8442274
DO - 10.1109/DRC.2018.8442274
M3 - Conference contribution
AN - SCOPUS:85053195561
SN - 9781538630280
T3 - Device Research Conference - Conference Digest, DRC
BT - 2018 76th Device Research Conference, DRC 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 76th Device Research Conference, DRC 2018
Y2 - 24 June 2018 through 27 June 2018
ER -