A three-terminal edge-triggered mott switch

Ahmedullah Aziz, Roman Engel-Herbert, Sumeet Kumar Gupta, Nikhil Shukla

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations


We demonstrate a novel VO2 based edge-triggered (ET) three-terminal Mott switch that leverages the displacement current induced by the switching of the gate voltage pulse to trigger an IMT in the VO2 channel. The design overcomes a long-standing challenge of realizing a three-terminal VO2 switch due to the absence of field-effect induced IMT in VO2. The ET Mott switch also enables isolation between the input the output (at steady state), and facilitates reduction in the effective trigger voltage in comparison to the two-terminal configuration. We show using simulations that these properties can be exploited to enable a BEOL-compatible 3T selector for MTJ-based cross-point memory, showing 3.4× higher cell TMR, as well as 45% 40% lower sneak-path current power, respectively.

Original languageEnglish (US)
Title of host publication2018 76th Device Research Conference, DRC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781538630280
StatePublished - Aug 20 2018
Event76th Device Research Conference, DRC 2018 - Santa Barbara, United States
Duration: Jun 24 2018Jun 27 2018

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Other76th Device Research Conference, DRC 2018
Country/TerritoryUnited States
CitySanta Barbara

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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