A Two-Layer Microwave FET Structure for Improved Characteristics

Mukunda B. Das; Paul Esqueda

doi:10.1109/T-ED.1977.18817

A Two-Layer Microwave FET Structure for Improved Characteristics

Mukunda B. Das, Paul Esqueda

Penn State Berks

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The characteristics of a proposed two-layer short-channel FET structure are analyzed and compared with those of the conventional structure. The new structure provides improved amplifier linearity and enhanced unity-current-gain frequency. Suitable combinations of doping in the two layers and gate-to-drain electrode separation can effectively reduce the device noise arising due to hot electrons.

Original language	English (US)
Pages (from-to)	757-761
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	24
Issue number	6
DOIs	https://doi.org/10.1109/T-ED.1977.18817
State	Published - Jun 1977

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/T-ED.1977.18817

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@article{75781771193540eebf3776b4e77889d4,

title = "A Two-Layer Microwave FET Structure for Improved Characteristics",

abstract = "The characteristics of a proposed two-layer short-channel FET structure are analyzed and compared with those of the conventional structure. The new structure provides improved amplifier linearity and enhanced unity-current-gain frequency. Suitable combinations of doping in the two layers and gate-to-drain electrode separation can effectively reduce the device noise arising due to hot electrons.",

author = "Das, \{Mukunda B.\} and Paul Esqueda",

year = "1977",

month = jun,

doi = "10.1109/T-ED.1977.18817",

language = "English (US)",

volume = "24",

pages = "757--761",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - A Two-Layer Microwave FET Structure for Improved Characteristics

AU - Das, Mukunda B.

AU - Esqueda, Paul

PY - 1977/6

Y1 - 1977/6

N2 - The characteristics of a proposed two-layer short-channel FET structure are analyzed and compared with those of the conventional structure. The new structure provides improved amplifier linearity and enhanced unity-current-gain frequency. Suitable combinations of doping in the two layers and gate-to-drain electrode separation can effectively reduce the device noise arising due to hot electrons.

AB - The characteristics of a proposed two-layer short-channel FET structure are analyzed and compared with those of the conventional structure. The new structure provides improved amplifier linearity and enhanced unity-current-gain frequency. Suitable combinations of doping in the two layers and gate-to-drain electrode separation can effectively reduce the device noise arising due to hot electrons.

UR - https://www.scopus.com/pages/publications/0017503261

UR - https://www.scopus.com/inward/citedby.url?scp=0017503261&partnerID=8YFLogxK

U2 - 10.1109/T-ED.1977.18817

DO - 10.1109/T-ED.1977.18817

M3 - Article

AN - SCOPUS:0017503261

SN - 0018-9383

VL - 24

SP - 757

EP - 761

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

ER -

A Two-Layer Microwave FET Structure for Improved Characteristics

Abstract

All Science Journal Classification (ASJC) codes

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