A voltage-controlled tunable thin-film distributed RC notch filter

Won Youl Choi; Susan Trolier-McKinstry

doi:10.1109/6144.910799

A voltage-controlled tunable thin-film distributed RC notch filter

Won Youl Choi, Susan Trolier-McKinstry

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Notch filters are widely used in communication and instrumentation systems not only for eliminating undesired frequencies and for measuring transient harmonic distortions, but also as central components of selective filters and oscillators in feedback arrangements. This paper describes the characteristics of a thin-film distributed RC (DRC) notch filter made from Au/TaN/Y-doped BaTiO₃ (Y-BT)/Pt. The dielectric (Y-BT) and resistive (TAN) films were grown by pulsed laser deposition (PLD). A notch frequency of 2.8 MHz and notch depth of -76.7 dB were measured from zero with a notch resistance (R_N) of 34 Ω. The experimental optimum notch parameters of α = R/R_N = 19.7 and x_n = ω/ω_o = 33.0 were obtained. Tunability of the notch frequency was observed with an applied dc bias voltage.

Original language	English (US)
Pages (from-to)	33-37
Number of pages	5
Journal	IEEE Transactions on Components and Packaging Technologies
Volume	24
Issue number	1
DOIs	https://doi.org/10.1109/6144.910799
State	Published - Mar 2001

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "A voltage-controlled tunable thin-film distributed RC notch filter",

abstract = "Notch filters are widely used in communication and instrumentation systems not only for eliminating undesired frequencies and for measuring transient harmonic distortions, but also as central components of selective filters and oscillators in feedback arrangements. This paper describes the characteristics of a thin-film distributed RC (DRC) notch filter made from Au/TaN/Y-doped BaTiO3 (Y-BT)/Pt. The dielectric (Y-BT) and resistive (TAN) films were grown by pulsed laser deposition (PLD). A notch frequency of 2.8 MHz and notch depth of -76.7 dB were measured from zero with a notch resistance (RN) of 34 Ω. The experimental optimum notch parameters of α = R/RN = 19.7 and xn = ω/ωo = 33.0 were obtained. Tunability of the notch frequency was observed with an applied dc bias voltage.",

author = "Choi, {Won Youl} and Susan Trolier-McKinstry",

note = "Funding Information: Manuscript received July 25, 2000; revised November 3, 2000. This work was supported by the TDK Cooperation. This paper was recommended for publication by Associate Editor A. Deutsch upon evaluation of the reviewers{\textquoteright} comments. W.-Y. Choi is with the MEMS Laboratory, S&C Sector, Samsung Advanced Institute of Technology, Suwon 440–600, Korea. S. Trolier-McKinstry is with the Materials Research Laboratory, Pennsylvania State University, University Park, PA 16802 USA. Publisher Item Identifier S 1521-3331(01)01381-2.",

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AU - Trolier-McKinstry, Susan

N1 - Funding Information: Manuscript received July 25, 2000; revised November 3, 2000. This work was supported by the TDK Cooperation. This paper was recommended for publication by Associate Editor A. Deutsch upon evaluation of the reviewers’ comments. W.-Y. Choi is with the MEMS Laboratory, S&C Sector, Samsung Advanced Institute of Technology, Suwon 440–600, Korea. S. Trolier-McKinstry is with the Materials Research Laboratory, Pennsylvania State University, University Park, PA 16802 USA. Publisher Item Identifier S 1521-3331(01)01381-2.

PY - 2001/3

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N2 - Notch filters are widely used in communication and instrumentation systems not only for eliminating undesired frequencies and for measuring transient harmonic distortions, but also as central components of selective filters and oscillators in feedback arrangements. This paper describes the characteristics of a thin-film distributed RC (DRC) notch filter made from Au/TaN/Y-doped BaTiO3 (Y-BT)/Pt. The dielectric (Y-BT) and resistive (TAN) films were grown by pulsed laser deposition (PLD). A notch frequency of 2.8 MHz and notch depth of -76.7 dB were measured from zero with a notch resistance (RN) of 34 Ω. The experimental optimum notch parameters of α = R/RN = 19.7 and xn = ω/ωo = 33.0 were obtained. Tunability of the notch frequency was observed with an applied dc bias voltage.

AB - Notch filters are widely used in communication and instrumentation systems not only for eliminating undesired frequencies and for measuring transient harmonic distortions, but also as central components of selective filters and oscillators in feedback arrangements. This paper describes the characteristics of a thin-film distributed RC (DRC) notch filter made from Au/TaN/Y-doped BaTiO3 (Y-BT)/Pt. The dielectric (Y-BT) and resistive (TAN) films were grown by pulsed laser deposition (PLD). A notch frequency of 2.8 MHz and notch depth of -76.7 dB were measured from zero with a notch resistance (RN) of 34 Ω. The experimental optimum notch parameters of α = R/RN = 19.7 and xn = ω/ωo = 33.0 were obtained. Tunability of the notch frequency was observed with an applied dc bias voltage.

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A voltage-controlled tunable thin-film distributed RC notch filter

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