TY - JOUR
T1 - Absence of a Kosterlitz-Thouless transition in ultrathin films
AU - Repaci, J.
AU - Kwon, C.
AU - Li, Qi
AU - Jiang, Xiuguang
AU - Venkatessan, T.
AU - Glover, R.
AU - Lobb, C.
AU - Newrock, R.
PY - 1996
Y1 - 1996
N2 - We have performed nanovolt-level dc measurements on single-unit-cell films of (Formula presented). When only the low-sensitivity data are analyzed, they are roughly consistent with the occurrence of a Kosterlitz-Thouless transition. At the lowest currents and voltages, however, the samples are ohmic at temperatures quite far below the nominal Kosterlitz-Thouless transition temperature, contrary to the theory. The ohmic response at low currents implies that there are unbound vortices present well below the nominal Kosterlitz-Thouless transition temperature.
AB - We have performed nanovolt-level dc measurements on single-unit-cell films of (Formula presented). When only the low-sensitivity data are analyzed, they are roughly consistent with the occurrence of a Kosterlitz-Thouless transition. At the lowest currents and voltages, however, the samples are ohmic at temperatures quite far below the nominal Kosterlitz-Thouless transition temperature, contrary to the theory. The ohmic response at low currents implies that there are unbound vortices present well below the nominal Kosterlitz-Thouless transition temperature.
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U2 - 10.1103/PhysRevB.54.R9674
DO - 10.1103/PhysRevB.54.R9674
M3 - Article
AN - SCOPUS:0001306714
SN - 1098-0121
VL - 54
SP - R9674-R9677
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 14
ER -