Absence of low-temperature phase transitions in epitaxial BaTiO3 thin films

D. A. Tenne, X. X. Xi, Y. L. Li, L. Q. Chen, A. Soukiassian, M. H. Zhu, A. R. James, J. Lettieri, D. G. Schlom, W. Tian, X. Q. Pan

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We have studied phase transitions in epitaxial BaTiO3 thin films by Raman spectroscopy. The films are found to remain in a single ferroelectric phase over the temperature range from 5 to 325 K. The low-temperature phase transitions characteristic of bulk BaTiO3 (tetragonal-orthorhombic- rhombohedral) are absent in the films. X-ray diffraction shows that the BaTiO3 films are under tensile strain due to the thermal expansion mismatch with the buffer layer. A phase-field calculation of the phase diagram and domain structures in BaTiO3 thin films predicts, without any priori assumption, that an orthorhombic phase with in-plane polarization is the thermodynamically stable phase for such values of tensile strain and temperature, consistent with the experimental Raman results.

Original languageEnglish (US)
Article number174101
Pages (from-to)174101-1-174101-5
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number17
StatePublished - May 2004

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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