Absolute sputtering yield of Ti/TiN by Ar+/N+ at 400-700 eV

R. Ranjan; J. P. Allain; M. R. Hendricks; D. N. Ruzic

doi:10.1116/1.1362678

Absolute sputtering yield of Ti/TiN by Ar⁺/N⁺ at 400-700 eV

R. Ranjan, J. P. Allain, M. R. Hendricks, D. N. Ruzic

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39 Scopus citations

Abstract

The measurement and modelling of sputtering yield in titanium (Ti) and titanium nitride (TiN) films samples is presented. The sputtering was carried out by argon and nitrogen beams at normal incidence and low energies.The films are used as diffusion barrier layers in aluminium copper metallization. The sputtering yield for Ti is found to be lower for TiN target due to preferential sputtering of nitrogen. The experimental result established that the ionized physical vapor deposition system is advantageous in mettalic mode.

Original language	English (US)
Pages (from-to)	1004-1007
Number of pages	4
Journal	Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume	19
Issue number	3
DOIs	https://doi.org/10.1116/1.1362678
State	Published - 2001

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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abstract = "The measurement and modelling of sputtering yield in titanium (Ti) and titanium nitride (TiN) films samples is presented. The sputtering was carried out by argon and nitrogen beams at normal incidence and low energies.The films are used as diffusion barrier layers in aluminium copper metallization. The sputtering yield for Ti is found to be lower for TiN target due to preferential sputtering of nitrogen. The experimental result established that the ionized physical vapor deposition system is advantageous in mettalic mode.",

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AU - Allain, J. P.

AU - Hendricks, M. R.

AU - Ruzic, D. N.

PY - 2001

Y1 - 2001

N2 - The measurement and modelling of sputtering yield in titanium (Ti) and titanium nitride (TiN) films samples is presented. The sputtering was carried out by argon and nitrogen beams at normal incidence and low energies.The films are used as diffusion barrier layers in aluminium copper metallization. The sputtering yield for Ti is found to be lower for TiN target due to preferential sputtering of nitrogen. The experimental result established that the ionized physical vapor deposition system is advantageous in mettalic mode.

AB - The measurement and modelling of sputtering yield in titanium (Ti) and titanium nitride (TiN) films samples is presented. The sputtering was carried out by argon and nitrogen beams at normal incidence and low energies.The films are used as diffusion barrier layers in aluminium copper metallization. The sputtering yield for Ti is found to be lower for TiN target due to preferential sputtering of nitrogen. The experimental result established that the ionized physical vapor deposition system is advantageous in mettalic mode.

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Absolute sputtering yield of Ti/TiN by Ar⁺/N⁺ at 400-700 eV

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