Accurate analysis of CMOS inverter driving transmission line based on FDTD

Xiaochun Li; Junfa Mao; Madhavan Swaminathan

doi:10.1109/MWSYM.2009.5166011

Accurate analysis of CMOS inverter driving transmission line based on FDTD

Xiaochun Li, Junfa Mao, Madhavan Swaminathan

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Scopus citations

Abstract

This paper introduces a numerical method for time domain analysis of the inverter driving interconnect in CMOS digital integrated circuits. To include the carriers' velocity saturation effect of short-channel devices, the alpha-power law model is used for MOS transistor modeling. Moreover, interconnect is modeled as transmission line, which is required in deep submicron technologies. Based on detailed analysis of inverter operation and FDTD analysis of transmission line, the accurate time domain response and 50% delay can be achieved by iterative computation. The error of the proposed method is within 5% and the runtime is only one-sixth compared with SPICE.

Original language	English (US)
Title of host publication	IMS 2009 - 2009 IEEE MTT-S International Microwave Symposium Digest
Pages	1573-1576
Number of pages	4
DOIs	https://doi.org/10.1109/MWSYM.2009.5166011
State	Published - 2009
Event	2009 IEEE MTT-S International Microwave Symposium, IMS 2009 - Boston, MA, United States Duration: Jun 7 2009 → Jun 12 2009

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
ISSN (Print)	0149-645X

Other

Other	2009 IEEE MTT-S International Microwave Symposium, IMS 2009
Country/Territory	United States
City	Boston, MA
Period	6/7/09 → 6/12/09

All Science Journal Classification (ASJC) codes

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/MWSYM.2009.5166011

Cite this

@inproceedings{917ba8791ca5457e85c82c00e8970e64,

title = "Accurate analysis of CMOS inverter driving transmission line based on FDTD",

abstract = "This paper introduces a numerical method for time domain analysis of the inverter driving interconnect in CMOS digital integrated circuits. To include the carriers' velocity saturation effect of short-channel devices, the alpha-power law model is used for MOS transistor modeling. Moreover, interconnect is modeled as transmission line, which is required in deep submicron technologies. Based on detailed analysis of inverter operation and FDTD analysis of transmission line, the accurate time domain response and 50% delay can be achieved by iterative computation. The error of the proposed method is within 5% and the runtime is only one-sixth compared with SPICE.",

author = "Xiaochun Li and Junfa Mao and Madhavan Swaminathan",

year = "2009",

doi = "10.1109/MWSYM.2009.5166011",

language = "English (US)",

isbn = "9781424428045",

series = "IEEE MTT-S International Microwave Symposium Digest",

pages = "1573--1576",

booktitle = "IMS 2009 - 2009 IEEE MTT-S International Microwave Symposium Digest",

note = "2009 IEEE MTT-S International Microwave Symposium, IMS 2009 ; Conference date: 07-06-2009 Through 12-06-2009",

}

Li, X, Mao, J & Swaminathan, M 2009, Accurate analysis of CMOS inverter driving transmission line based on FDTD. in IMS 2009 - 2009 IEEE MTT-S International Microwave Symposium Digest., 5166011, IEEE MTT-S International Microwave Symposium Digest, pp. 1573-1576, 2009 IEEE MTT-S International Microwave Symposium, IMS 2009, Boston, MA, United States, 6/7/09. https://doi.org/10.1109/MWSYM.2009.5166011

TY - GEN

T1 - Accurate analysis of CMOS inverter driving transmission line based on FDTD

AU - Li, Xiaochun

AU - Mao, Junfa

AU - Swaminathan, Madhavan

PY - 2009

Y1 - 2009

N2 - This paper introduces a numerical method for time domain analysis of the inverter driving interconnect in CMOS digital integrated circuits. To include the carriers' velocity saturation effect of short-channel devices, the alpha-power law model is used for MOS transistor modeling. Moreover, interconnect is modeled as transmission line, which is required in deep submicron technologies. Based on detailed analysis of inverter operation and FDTD analysis of transmission line, the accurate time domain response and 50% delay can be achieved by iterative computation. The error of the proposed method is within 5% and the runtime is only one-sixth compared with SPICE.

AB - This paper introduces a numerical method for time domain analysis of the inverter driving interconnect in CMOS digital integrated circuits. To include the carriers' velocity saturation effect of short-channel devices, the alpha-power law model is used for MOS transistor modeling. Moreover, interconnect is modeled as transmission line, which is required in deep submicron technologies. Based on detailed analysis of inverter operation and FDTD analysis of transmission line, the accurate time domain response and 50% delay can be achieved by iterative computation. The error of the proposed method is within 5% and the runtime is only one-sixth compared with SPICE.

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U2 - 10.1109/MWSYM.2009.5166011

DO - 10.1109/MWSYM.2009.5166011

M3 - Conference contribution

AN - SCOPUS:77949962148

SN - 9781424428045

T3 - IEEE MTT-S International Microwave Symposium Digest

SP - 1573

EP - 1576

BT - IMS 2009 - 2009 IEEE MTT-S International Microwave Symposium Digest

T2 - 2009 IEEE MTT-S International Microwave Symposium, IMS 2009

Y2 - 7 June 2009 through 12 June 2009

ER -

Accurate analysis of CMOS inverter driving transmission line based on FDTD

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