Admittance characterization and analysis of trap states in AlGaN/GaN heterostructures

R. M. Chu; Y. G. Zhou; K. J. Chen; K. M. Lau

doi:10.1002/pssc.200303344

Admittance characterization and analysis of trap states in AlGaN/GaN heterostructures

R. M. Chu, Y. G. Zhou, K. J. Chen, K. M. Lau

Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

31 Scopus citations

Abstract

We present a systematic study on the admittance characterization of trap states in AlGaN/GaN het-erostructures. An equivalent circuit model was developed to analyze the spatial location, energy distribution density, and time constant of the AlGaN/GaN trap states. Results show that AlGaN/GaN interface trap states are responsible for the trapping behavior in the 10 kHz-1 MHz frequency range. An increase of AlGaN layer thickness or Al composition leads to greater trap state density at the AlGaN/GaN interface.

Original language	English (US)
Pages (from-to)	2400-2403
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200303344
State	Published - 2003
Event	5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan Duration: May 25 2003 → May 30 2003

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1002/pssc.200303344

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title = "Admittance characterization and analysis of trap states in AlGaN/GaN heterostructures",

abstract = "We present a systematic study on the admittance characterization of trap states in AlGaN/GaN het-erostructures. An equivalent circuit model was developed to analyze the spatial location, energy distribution density, and time constant of the AlGaN/GaN trap states. Results show that AlGaN/GaN interface trap states are responsible for the trapping behavior in the 10 kHz-1 MHz frequency range. An increase of AlGaN layer thickness or Al composition leads to greater trap state density at the AlGaN/GaN interface.",

author = "Chu, {R. M.} and Zhou, {Y. G.} and Chen, {K. J.} and Lau, {K. M.}",

year = "2003",

doi = "10.1002/pssc.200303344",

language = "English (US)",

pages = "2400--2403",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

publisher = "Wiley-VCH Verlag",

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note = "5th International Conference on Nitride Semiconductors, ICNS 2003 ; Conference date: 25-05-2003 Through 30-05-2003",

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TY - JOUR

T1 - Admittance characterization and analysis of trap states in AlGaN/GaN heterostructures

AU - Chu, R. M.

AU - Zhou, Y. G.

AU - Chen, K. J.

AU - Lau, K. M.

PY - 2003

Y1 - 2003

N2 - We present a systematic study on the admittance characterization of trap states in AlGaN/GaN het-erostructures. An equivalent circuit model was developed to analyze the spatial location, energy distribution density, and time constant of the AlGaN/GaN trap states. Results show that AlGaN/GaN interface trap states are responsible for the trapping behavior in the 10 kHz-1 MHz frequency range. An increase of AlGaN layer thickness or Al composition leads to greater trap state density at the AlGaN/GaN interface.

AB - We present a systematic study on the admittance characterization of trap states in AlGaN/GaN het-erostructures. An equivalent circuit model was developed to analyze the spatial location, energy distribution density, and time constant of the AlGaN/GaN trap states. Results show that AlGaN/GaN interface trap states are responsible for the trapping behavior in the 10 kHz-1 MHz frequency range. An increase of AlGaN layer thickness or Al composition leads to greater trap state density at the AlGaN/GaN interface.

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U2 - 10.1002/pssc.200303344

DO - 10.1002/pssc.200303344

M3 - Conference article

AN - SCOPUS:59349088759

SN - 1610-1634

SP - 2400

EP - 2403

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 7

T2 - 5th International Conference on Nitride Semiconductors, ICNS 2003

Y2 - 25 May 2003 through 30 May 2003

ER -

Admittance characterization and analysis of trap states in AlGaN/GaN heterostructures

Abstract

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