Admittance characterization and analysis of trap states in AlGaN/GaN heterostructures

R. M. Chu, Y. G. Zhou, K. J. Chen, K. M. Lau

Research output: Contribution to journalConference articlepeer-review

31 Scopus citations


We present a systematic study on the admittance characterization of trap states in AlGaN/GaN het-erostructures. An equivalent circuit model was developed to analyze the spatial location, energy distribution density, and time constant of the AlGaN/GaN trap states. Results show that AlGaN/GaN interface trap states are responsible for the trapping behavior in the 10 kHz-1 MHz frequency range. An increase of AlGaN layer thickness or Al composition leads to greater trap state density at the AlGaN/GaN interface.

Original languageEnglish (US)
Pages (from-to)2400-2403
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number7
StatePublished - 2003
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: May 25 2003May 30 2003

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics


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